首頁(yè) >HY29LV400BT70>規(guī)格書列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
HY29LV400BT70 | 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory | HynixHynix Semiconductor SK海力士海力士半導(dǎo)體 | Hynix | |
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory | HynixHynix Semiconductor SK海力士海力士半導(dǎo)體 | Hynix | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory | spansionSPANSION 飛索飛索半導(dǎo)體 | spansion | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD | ||
4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications | AMDAdvanced Micro Devices 超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司 | AMD |
詳細(xì)參數(shù)
- 型號(hào)：
HY29LV400BT70
- 制造商：
HYNIX
- 制造商全稱：
Hynix Semiconductor
- 功能描述：
4 Mbit(512K x 8/256K x 16) Low Voltage Flash Memory
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
HY |
TSOP48 |
15 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | |||
HY |
17+ |
TSOP48 |
9988 |
只做原裝進(jìn)口,自己庫(kù)存 |
詢價(jià) | ||
HYNIX |
2023+ |
TSSOP |
3827 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
HYNIX/海力士 |
23+ |
TSOP |
3900 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
HY |
24+ |
TSOP48 |
11520 |
詢價(jià) | |||
HY |
23+ |
TSOP48 |
8890 |
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢 |
詢價(jià) | ||
HY |
02+ |
TSOP/48 |
11520 |
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢 |
詢價(jià) | ||
HYNIX |
19+ |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) | |||
02+ |
2020+ |
HY |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
HYNIX |
22+ |
TSOP-48 |
32350 |
原裝正品 假一罰十 公司現(xiàn)貨 |
詢價(jià) |
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