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AOZ8030

8-LineEMIFilterwithIntegratedESDProtection

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

AOZ8030DIL

8-LineEMIFilterwithIntegratedESDProtection

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

APT8030

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030JN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT8030JN

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·ACandDCMotorDrives ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT8030JVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030JVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030JVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

ADPOW

Advanced Power Technology

APT8030LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030LVFR

POWERMOSV

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT8030LVFR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT8030LVFRG

POWERMOSV

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT8030LVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi

ADPOW

Advanced Power Technology

APT8030LVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

AT8030

2X15W2.0channelanti-breakingClassDamplifier

YONGFUKANGShenzhenshi YONGFUKANG Technology co.,LTD

永福康深圳市永?？悼萍加邢薰?/p>

AT8030TT

2X15W2.0channelanti-breakingClassDamplifier

YONGFUKANGShenzhenshi YONGFUKANG Technology co.,LTD

永福康深圳市永福康科技有限公司

BF8030

DCBlowerFan80x80x30mm

COOLCOXCoolCox Limited All rights reserved.

奇凌電子東莞市奇凌電子科技有限公司

C8030

RG59/UTypeCoaxial&2/C18AWGSiameseCCTV-PlenumCable

GENERALGeneral Cable Technologies Corporation

通用電氣公司美國(guó)通用電氣公司

CEB8030

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    AM8030DCB

  • 功能描述：

    Communications Controller

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
AMD
22+
-
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
 詢價(jià)
AMD
23+
2800
正品原裝貨價(jià)格低
 詢價(jià)
AMD
24+
-
5000
全新原裝正品,現(xiàn)貨銷(xiāo)售
 詢價(jià)
AMD
22+23+
-
8000
新到現(xiàn)貨，只做原裝進(jìn)口
 詢價(jià)
AMD
23+
原裝正品現(xiàn)貨
10000
-
 詢價(jià)
AMD
1982
302
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
AMD
22+
DIP
8200
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!
 詢價(jià)
AMD
2023+
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
AMD
23+
原廠封裝
5177
現(xiàn)貨
 詢價(jià)
AMD
2015+
SOP/DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
 詢價(jià)
更多AM8030DCB供應(yīng)商 更新時(shí)間2025-1-11 15:18:00

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