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AM83135-030中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
AM83135-030規(guī)格書詳情
DESCRIPTION
The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is characterized at 100μsec pulse width and 10 duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM83135-030 is supplied in the IMPAC? Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.
■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 30 W MIN. WITH 5.5 dB GAIN
產(chǎn)品屬性
- 型號(hào)：
AM83135-030
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
AMD |
23+ |
NA |
6500 |
全新原裝假一賠十 |
詢價(jià) | ||
AMD |
24+ |
BGA |
378 |
原裝正品,歡迎來電咨詢! |
詢價(jià) | ||
TSC |
23+ |
NA |
314 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
AP |
24+ |
TO-2525 |
33000 |
詢價(jià) | |||
AMD |
22+ |
DIP-28P |
8200 |
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢(shì)!! |
詢價(jià) | ||
TERADYNE |
新 |
26 |
全新原裝 貨期兩周 |
詢價(jià) | |||
AP |
24+ |
TO-252/5 |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
N/A |
2021+ |
DIP |
100500 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
AMD |
23+ |
BGA |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
AMD |
23+ |
BGA |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |
