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BR100N10

N-CHANNELMOSFETinaTO-220PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

BRB100N10

N-CHANNELMOSFETinaTO-263PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

BSC100N10NSFG

OptiMOS??Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CEB100N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP100N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FDP100N10

N-ChannelPowerTrench?MOSFET

Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?RDS(on)=8.2mΩ(Typ.)@VGS=10V,ID=75A ?Fastswitch

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP100N10

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220packaging ?Lowswitchingloss ?Ultralowgatecharge ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?Switchingapplications ?AC-DCconverters ?LEDlighting ?Unin

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FIR100N10PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

FIR100N10RG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

FTD100N10A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IXFK100N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK100N10

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon

IXYS

IXYS Corporation

IXFN100N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

LMPC100N10

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MTY100N10E

TMOSPOWERFET100AMPERES100VOLTSRDS(on)=0.011OHM

TMOSE-FET?PowerFieldEffecttransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforh

Motorola

Motorola, Inc

MTY100N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTY100N10E

PowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NDBA100N10B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDBA100N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NDPL100N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

供應(yīng)商型號品牌批號封裝庫存備注價格
APM
22+
PDFN5*6-8L
280000
原裝進口現(xiàn)貨支持實單
 詢價
APM
2023+
PDFN5*6-8L
50000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
APM
2102+
TO-220
6854
只做原廠原裝正品假一賠十!
 詢價
永源/APM
23+
TO-220TO-263
4556000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
APM(永源微電子)
20+
PDFN-8L(5x6)
5000
詢價
24+
N/A
65000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
AKM現(xiàn)貨
2022+
QFN-16
350000
專注工業(yè)、軍工級別芯片,十五年優(yōu)質(zhì)供應(yīng)商
 詢價
AKMSemiconductorInc.
23+
16-QFN(3x3)
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價
AKM Semiconductor Inc.
21+
16-QFN(3x3)
53200
一級代理/放心采購
 詢價
AKM
20+
QFN-16
9854
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多AP100N10NF供應(yīng)商 更新時間2024-11-20 16:23:00

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