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APT4020BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT4020BN

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT4020BNR

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT4020BVFR

POWERMOSVFREDFET

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi

ADPOW

Advanced Power Technology

APT4020BVFR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT4020BVFRG

POWERMOSVFREDFET

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi

ADPOW

Advanced Power Technology

APT4020BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi

ADPOW

Advanced Power Technology

APT4020BVR

iscN-ChannelMOSFETTransistor

FEATURES DrainCurrent:ID=23A@TC=25℃ DrainSourceVoltage :VDSS=400V(Min) StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V 100avalanchetested MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT4020DN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=23.5A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT4020HN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=23.5A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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17+
TO-247B
31518
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APT
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8866
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FSC
22+
SOP-8
8200
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APT
23+
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3000
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APT
24+
TO-247
2050
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ADPOW
23+
原廠原包
19960
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APT
2447
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100500
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APT
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10000
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89
80
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TO-247
6000
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更多APT4020BN供應(yīng)商 更新時(shí)間2025-2-25 14:00:00