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APT6030BNR

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT6030BVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

ADPOW

Advanced Power Technology

APT6030BVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6030BVFR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT6030BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?MOSFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6030BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?MOSFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6030BVR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT6030DN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT6030SVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

ADPOW

Advanced Power Technology

APT6030SVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?MOSFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

ASITPV6030

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASITPV6030isDesignedforTelevisionBandIV&VApplicationsupto860MHz. FEATURES: ?CommonEmitter ?PG=9.5dBat35W/860MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

ATFN6030A

CrystalFilter

CTSCTS Electronic Components

西迪斯西迪斯公司

BD6030GSW

NegativepowersupplyforCCDcameraofmobilephones

ROHMRohm

羅姆羅姆半導(dǎo)體集團

C6030

Ultra-compactIndustrialPC

BECKHOFFBeckhoff Automation GmbH & Co. KG

倍福自動化

CBT-BGA-6030

Excellentsignalintegrityathighfrequencies

IRONWOOD

Ironwood Electronics.

CEB6030AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,52A,RDS(ON)=11m?(typ)@VGS=10V. RDS(ON)=16m?(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6030L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=15.5m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6030AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■30V,52A,RDS(ON)=11m?(typ)@VGS=10V. RDS(ON)=16m?(typ)@VGS=5V. ■Extralowgatecharge. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,52A,RDS(ON)=13.5mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    APT6030BNR

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247AD

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
1100
詢價
APT
22+
TO-247
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
 詢價
APT
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
 詢價
APT
24+
TO-247
1298
詢價
APT
22+
TO-247
8000
原裝正品支持實單
 詢價
APT
23+
TO-247
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
APT
23+
TO-247
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
APT
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
APT
24+
TO247
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
T0-3
23+
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價
更多APT6030BNR供應(yīng)商 更新時間2025-1-17 16:00:00

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