首頁 >AQV410EHAX>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AQV410EHAX | PhotoMOS RELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | |
AQV410EHAX | 包裝:管件 封裝/外殼:6-SMD(0.300",7.62mm) 類別:繼電器 固態(tài)繼電器 描述:SSR RELAY DPST-NC 130MA 0-350V | PanasonicElectricWorks Panasonic Electric Works | PanasonicElectricWorks | |
AQV410EHAX | 包裝:散裝 封裝/外殼:6-SMD(0.300",7.62mm) 類別:繼電器 固態(tài)繼電器 描述:SSR RELAY DPST-NC 130MA 0-350V | PanasonicElectricWorks Panasonic Electric Works | PanasonicElectricWorks | |
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
PhotoMOSRelayDimensions | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
FixedAttenuators(N,BNC,TNC) | HIROSEHirose Electric Company 廣瀨日本廣瀨電機(jī)株式會(huì)社 | HIROSE | ||
50ohmswidevarietiesstandardconnectors | HIROSEHirose Electric Company 廣瀨日本廣瀨電機(jī)株式會(huì)社 | HIROSE | ||
Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
CompressionStyleRingTongueTerminal | MOLEX4Molex Electronics Ltd. 莫仕 | MOLEX4 | ||
CompressionStyleRingTongueTerminalfor4AWGWire,StudSize10,Plated | MOLEX4Molex Electronics Ltd. 莫仕 | MOLEX4 |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
AQV410EHAX
- 制造商:
Panasonic Electric Works
- 類別:
繼電器 > 固態(tài)繼電器
- 系列:
PhotoMOS? AQV
- 包裝:
管件
- 安裝類型:
表面貼裝型
- 電路:
DPST-NC(2 Form B)
- 輸出類型:
AC,DC
- 電壓 - 輸入:
1.14VDC
- 端接樣式:
鷗翼
- 封裝/外殼:
6-SMD(0.300",7.62mm)
- 供應(yīng)商器件封裝:
6-SMD
- 描述:
SSR RELAY DPST-NC 130MA 0-350V
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
松下panasonic |
24+ |
全新原裝 |
6180 |
詢價(jià) | |||
NAIS |
06+ |
SOP6 |
2000 |
詢價(jià) | |||
PANASONIC |
22+ |
原廠原封 |
8200 |
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢!! |
詢價(jià) | ||
Panason |
23+ |
SOP6 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
panasoni |
專業(yè)光耦 |
DIPSOP6 |
65800 |
光耦原裝優(yōu)勢主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
NAIS松下 |
24+ |
SMDDIP |
12500 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
PANASONIC(松下) |
2032+ |
SMD-6 |
2579 |
向鴻優(yōu)勢庫存,貨在倉庫要貨請(qǐng)確認(rèn) |
詢價(jià) | ||
PANASONIC(松下) |
2112+ |
SMD-6 |
115000 |
1000個(gè)/圓盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價(jià) | ||
Panasoni |
21+ |
SOP6 |
1344 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
PANASONIC |
20+ |
6-SMD |
8796 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) |
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