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AUIRGSL30B60K

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRGB30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGB30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

IRGB30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

IRGP30B60KD

NPTIGBT

DESCRIPTION ·LowDiodeVF ·10μsShortCircuitCapability ·UltrasoftDiodeReverseRecoveryCharacteristics APPLICATIONS ·LowEMI ·RuggedTransientPerformance ·BenchmarkEfficiencyforMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRGP30B60KD-E

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-247ADPackage Benefits ?BenchmarkEfficiencyforMotorControl

IRF

International Rectifier

IRGP30B60KD-EP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-247ADPackage ?Lead-Free Benefits ?BenchmarkEfficiencyfor

IRF

International Rectifier

IRGP30B60KD-EPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGS30B60

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGS30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

詳細參數

  • 型號：

    AUIRGS30B60KTRR

  • 功能描述：

    IGBT 晶體管 600V AUTO ULTRAFAST 10-30 KHZ IGBT

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO-263
11846
一級代理商現貨批發(fā),原裝正品,假一罰十
 詢價
IR
23+
D2PAK
10000
公司只做原裝正品
 詢價
IR
22+
D2PAK
6000
十年配單,只做原裝
 詢價
IR
23+
D2PAK
6000
原裝正品，支持實單
 詢價
IR
22+
D2PAK
25000
只做原裝進口現貨,專注配單
 詢價
IR
22+
D2PAK
25000
只做原裝進口現貨,專注配單
 詢價
IR
23+
D2PAK
8000
只做原裝現貨
 詢價
IR
23+
D2PAK
7000
詢價
IR
24+
D2PAK
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
IR
24+
TO-247
200
絕對原裝正品現貨假一賠十
 詢價
更多AUIRGS30B60KTRR供應商 更新時間2025-2-10 16:14:00

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