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BAV302

200VDetectionswitchtube

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者：深圳市福田區(qū)吉富昌電子商行

BAV302

SwitchingDiode

Features ?SiliconEpitaxialPlanarDiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD323/SOT23footprints ?Electricaldataidenticalwiththedevices BAV100...BAV103/BAV200...BAV203 Applications ?Generalpurpose MechanicalData ?Case:MicroMELFGlassCase ?Weigh

Good-Ark

GOOD-ARK Electronics

BAV302

SURFACEMOUNTFASTSWITCHINGDIODE

Features ●Hermeticsealedparts ●Savingspace ●SiliconEpitaxialPlanarDiodes

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

BAV302

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices BAV100toBAV103,BAV200toBAV203 ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAV302-TR

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BB302C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB302MBW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC302

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

MICRO-ELECTRONICS

Micro Electronics

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TOBY
24+/25+
841
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢(xún)價(jià)
TOBY
23+
NA
1227
專(zhuān)做原裝正品,假一罰百!
 詢(xún)價(jià)
BORN
22+
SMA
25000
伯恩全系列在售
 詢(xún)價(jià)
BORN
22+
SMA
20000
原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢(xún)價(jià)
DANFOSS
2447
20
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢(xún)價(jià)
DANFOSS
23+
20
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳
 詢(xún)價(jià)
ON
23+
TO263
11000
專(zhuān)業(yè)優(yōu)勢(shì)供應(yīng)
 詢(xún)價(jià)
ON/安森美
SOT-263
22+
6000
十年配單,只做原裝
 詢(xún)價(jià)
ON/安森美
22+
SOT-263
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢(xún)價(jià)
ON/安森美
22+
SOT-263
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢(xún)價(jià)
更多B302P供應(yīng)商 更新時(shí)間2025-4-16 18:20:00

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