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BD660CS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BD660CT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?Forsurfacemountedapplications ?Lowprofilepackage ?Built-instrainrelief ?Lowpowerloss,Highefficiency ?Highsurgecapacity ?F

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BF660

PNPSiliconRFTransistor(ForVHFoscillatorapplications)

PNPSiliconRFTransistor ●ForVHFoscillatorapplications

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BF660W

PNPSiliconRFTransistor(ForVHFoscillatorapplications)

PNPSiliconRFTransistor ?ForVHFoscillatorapplications

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFU660F

NPNwidebandsiliconRFtransistor

Generaldescription NPNsiliconmicrowavetransistorforhighspeed,lownoiseapplicationsinaplastic,4-pindual-emitterSOT343Fpackage. Featuresandbenefits ■LownoisehighlinearityRFtransistor ■Highoutputthird-orderinterceptpoint27dBmat1.8GHz ■40GHzfTsilicontechnolo

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFU660F

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFU660FWB

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BRUS660

ULTRA-FASTRECOVERY8AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISP.C.BOARDMOUNTING

edi

Electronic devices inc.

BTS660P

SmartHighsideHighCurrentPowerSwitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CAT660

100mACMOSChargePumpInverter/Doubler

DESCRIPTION TheCAT660isacharge-pumpvoltageconverter.Itwillinverta1.5Vto5.5Vinputtoa-1.5Vto-5.5Voutput.Onlytwoexternalcapacitorsareneeded.Withaguaranteed100mAoutputcurrentcapability,theCAT660canreplaceaswitchingregulatoranditsinductor.LowerEMIisachiev

Catalyst

Catalyst Semiconductor

供應商型號品牌批號封裝庫存備注價格
ON/安森美
24+
SOT-252
100
原裝正品,假一罰十!
詢價
ON/安森美
23+
SOT-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ON/安森美
23+
NA/
3350
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
ON
23+
SOT-252
6648
專注配單,只做原裝進口現(xiàn)貨
詢價
ON
23+
SOT-252
6648
專注配單,只做原裝進口現(xiàn)貨
詢價
ON/安森美
25+
SOT-252
100
原裝正品,假一罰十!
詢價
PHILIPS/飛利浦
24+
LL-34
6618
公司現(xiàn)貨庫存,支持實單
詢價
ON
23+
TO252
8000
專業(yè)優(yōu)勢供應
詢價
ON
24+
SOT-252
35200
一級代理/放心采購
詢價
O
SOT-252
22+
6000
十年配單,只做原裝
詢價
更多B660LG供應商 更新時間2025-3-25 10:50:00