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BD660CS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

BD660CT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?Forsurfacemountedapplications ?Lowprofilepackage ?Built-instrainrelief ?Lowpowerloss,Highefficiency ?Highsurgecapacity ?F

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

BF660

PNPSiliconRFTransistor(ForVHFoscillatorapplications)

PNPSiliconRFTransistor ●ForVHFoscillatorapplications

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BF660W

PNPSiliconRFTransistor(ForVHFoscillatorapplications)

PNPSiliconRFTransistor ?ForVHFoscillatorapplications

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFU660F

NPNwidebandsiliconRFtransistor

Generaldescription NPNsiliconmicrowavetransistorforhighspeed,lownoiseapplicationsinaplastic,4-pindual-emitterSOT343Fpackage. Featuresandbenefits ■LownoisehighlinearityRFtransistor ■Highoutputthird-orderinterceptpoint27dBmat1.8GHz ■40GHzfTsilicontechnolo

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFU660F

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BFU660FWB

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BRUS660

ULTRA-FASTRECOVERY8AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISP.C.BOARDMOUNTING

edi

Electronic devices inc.

BTS660P

SmartHighsideHighCurrentPowerSwitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CAT660

100mACMOSChargePumpInverter/Doubler

DESCRIPTION TheCAT660isacharge-pumpvoltageconverter.Itwillinverta1.5Vto5.5Vinputtoa-1.5Vto-5.5Voutput.Onlytwoexternalcapacitorsareneeded.Withaguaranteed100mAoutputcurrentcapability,theCAT660canreplaceaswitchingregulatoranditsinductor.LowerEMIisachiev

Catalyst

Catalyst Semiconductor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON
23+
TO252
8000
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
ON
24+
SOT-252
35200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
O
22+
SOT-252
6000
十年配單,只做原裝
 詢價(jià)
ON
23+
TO-252
4500
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售
 詢價(jià)
O
22+
SOT-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
ON
23+
TO252
3000
原裝正品假一罰百!可開增票!
 詢價(jià)
ON/安森美
23+
TO252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ON/安森美
23+
NA/
68
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
ON/安森美
23+
TO252
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
ON/安森美
25+
TO252
237
原裝正品,假一罰十!
 詢價(jià)
更多B660T供應(yīng)商 更新時(shí)間2025-3-23 14:02:00

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