B730

Marking：B730；Package：TO-251；6A 400V N-channel Enhancement Mode Power MOSFET

B7301

SAW Components Low-Loss Filter for Mobile Communication 400,0 MHz

Features ●Low-lossIFfilterformobiletelephone ●ChannelselectioninGSM,PCN,PCSsystems ●ChipSizedSAWPackage ●Balancedandunbalancedoperationpossible ●expansioncoilforminimuminsertionattenuationandoptimumbandwidthadjustment

B7302

SAW Components Low-Loss Filter for Mobile Communication 360,0 MHz

Features ■Low-lossIFfilterformobiletelephone ■ChannelselectioninGSM,PCNsystems ■ChipSizedSAWPackage ■Noexpansioncoil

B7304

SAW Components Low-Loss Filter for Mobile Communication 225,0 MHz

Features ●Low-lossIFfilterformobiletelephone ●ChannelselectioninGSM,PCN,PCSsystems ●ChipSizedSAWPackage ●expansioncoilforminimuminsertionattenuationandoptimumbandwidthadjustment

B7305

SAW Components IF Filter for Mobile Communication 190 MHz

Features ■IFfilterformobiletelephone ■ChannelselectioninW-CDMAsystems ■Chip-SizeSAWFilterPackage ■Balancedandunbalancedoperationpossible ■PackageforSurfaceMountedTechnology(SMT)

BB730

SCHOTTKYDIODES

[ITTComponents] SCHOTTKYDIODES

BFU730F

NPNwidebandsilicongermaniumRFtransistor

Generaldescription NPNsilicongermaniummicrowavetransistorforhighspeed,lownoiseapplicationsinaplastic,4-pindual-emitterSOT343Fpackage. Featuresandbenefits ■Lownoisehighgainmicrowavetransistor ■Noisefigure(NF)=0.8dBat5.8GHz ■Highmaximumpowergain18.5dBat

BFU730F

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BFU730FWB

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BFU730LX

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp