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CEM3112

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,11.9A,RDS(ON)=11mW@VGS=10V. RDS(ON)=15mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP3112

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3112

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC3112

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,37.8A,RDS(ON)=9.7mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CM3112

150mA/1.2VCMOSLDORegulator

ProductDescription TheCM3112-12isalowquiescentcurrent(90uA)regulatorthatdeliversupto150mAofloadcurrentatafixed1.2Voutput.Allthenecessarycircuitryhasbeenincludedtodelivera50?powergoodsignal(opendrain)whichremainsfor5msaftertheoutputhasexceeded90(typ

CALMIRCO

California Micro Devices Corp

CPH3112

DC/DCConverterApplications

DC/DCConverterApplications Features ?AdoptionofMBITprocesses. ?Highcurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.9mm). ?Highallowablepowerdissipation. Applications ?Relaydriv

SANYOSanyo Semicon Device

三洋三洋電機株式會社

DMN3112S

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance: ?57m?@VGS=10V ?112m?@VGS=4.5V ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(

DIODES

Diodes Incorporated

DMN3112S

N-CHANNELENHANCEMENTMODEMOSFET

Features ?LowOn-Resistance: 57m?@VGS=10V 112m?@VGS=4.5V ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?LeadFreeByDesign/RoHSCompliant(Note1) ?GreenDevice(Note2) ?QualifiedtoAEC-Q101StandardsforHigh

ZPSEMIZP Semiconductor

至尚臻品

DMN3112SSS

SINGLEN-CHANNELENHANCEMENTMODEMOSFET

Features ?LowOn-Resistance ?57m?@VGS=10V ?112m?@VGS=4.5V ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?LeadFreeByDesign/RoHSCompliant(Note2) ?GreenDevice(Note4) ?QualifiedtoAEC-Q101StandardsforHi

DIODES

Diodes Incorporated

DS3112

TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux

DallasDallas Semiconductor

亞德諾亞德諾半導體

詳細參數(shù)

  • 型號：

    BA3112

  • 制造商：

    ROHM

  • 制造商全稱：

    Rohm

  • 功能描述：

    MONOLITAIC ICs

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TOSHIBA
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21322
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7300
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7300
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16
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3880
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