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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
BB3	文件：105.83 Kbytes Page：1 Pages	Single Row Terminal Blocks Continued TerminalBlocks-SingleRow CoverOptions-SingleRow	COOPER COOPER	COOPER
BB301	文件：46.16 Kbytes Page：10 Pages	Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB301	文件：46.12 Kbytes Page：10 Pages	Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB301C	文件：46.16 Kbytes Page：10 Pages	Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB301C	文件：271.19 Kbytes Page：8 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
BB301CAW-TL-E	文件：271.19 Kbytes Page：8 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
BB301M	文件：181.81 Kbytes Page：8 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
BB301M	文件：46.12 Kbytes Page：10 Pages	Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB301MAW-TL-E	文件：181.81 Kbytes Page：8 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
BB302C	文件：58.21 Kbytes Page：11 Pages	Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB302M	文件：61.89 Kbytes Page：11 Pages	Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB302M	文件：295.09 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
BB302MBW-TL-E	文件：295.09 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
BB303M	文件：102.66 Kbytes Page：14 Pages	Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highforwardtransferadmittance;(\|yfs\|=42mStyp.atf=1kHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto250VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB304	文件：293.45 Kbytes Page：1 Pages	Silicon Epitaxial Planar Dual Capacitance Diodes Features: Commoncathode	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
BB304A	文件：60.17 Kbytes Page：3 Pages	Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) SiliconVariableCapacitanceDiode PreliminaryData ●ForFMtuners ●Monolithicchipwithcommoncathodeforperfecttrackingofbothdiodes ●Uniformsquarelawcharacteristics ●IdealHifituningdevicewhenusedinLow-distortionback-tobackconfiguration ●Color-codedcapacitancesubgr	SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司	SIEMENS
BB304C	文件：67.88 Kbytes Page：12 Pages	Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Highgain; (PG=29dBtyp.atf=200MHz) ?Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) ?Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. ?Withstandi	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB304C	文件：217.81 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Highgain; (PG=29dBtyp.atf=200MHz) ?Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) ?Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. ?Withstandi	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
BB304CDW-TL-E	文件：217.81 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC VHF RF Amplifier Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Highgain; (PG=29dBtyp.atf=200MHz) ?Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) ?Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. ?Withstandi	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
BB304M	文件：68.48 Kbytes Page：12 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain; (PG=29dBtyp.atf=200MHz) ?Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) ?Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. ?Withstandingt	HitachiHitachi Semiconductor 日立日立公司	Hitachi

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晶體管資料

型號：
BB3
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
UJT-P
性質(zhì)：
封裝形式：
直插封裝
極限工作電壓：
最大電流允許值：
0.001A
最大工作頻率：
<1MHZ或未知
引腳數(shù)：
4
可代換的型號：
最大耗散功率：
放大倍數(shù)：
圖片代號：
D-13
vtest：
0
htest：
999900
atest：
0.001
wtest：
0

詳細參數(shù)

型號：
BB3
制造商：
HITACHI
制造商全稱：
Hitachi Semiconductor
功能描述：
Build in Biasing Circuit MOS FET IC UHF RF Amplifier

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市佳鑫美電子科技有限公司	BB3		24+	SOT6.M	3629	原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!	詢價
深圳市粵科源興科技有限公司	BB304	INFINION	13+	TO-92	60298	原裝分銷	詢價
深圳市勤思達科技有限公司	BB33249	ST	10+	DIP	7800	全新原裝正品,現(xiàn)貨銷售	詢價
深圳市毅創(chuàng)騰電子科技有限公司	BB3606AG	BB	23+	DIP	7000	絕對全新原裝!100%保質(zhì)量特價!請放心訂購!	詢價
深圳市福安甌科技有限公司	BB3627AM	TI	22+	CAN8	301	⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙	詢價
深圳市弘為電子有限公司	BB301MAW/AW	HITACHI	24+	SOT-143	6000	原裝現(xiàn)貨假一罰十	詢價
深圳市星佑電子有限公司	BB34460	MOT	00/01+	PLCC52	161	全新原裝100真實現(xiàn)貨供應	詢價
深圳市卓越微芯電子有限公司	BB304MDW-TR-E	RENESAS	2020+	SOT-143	18000	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市昌和盛利電子有限公司	BB3581J	BB	23+	CAN	8931		詢價
深圳市恒創(chuàng)達實業(yè)有限公司	BB305CEW-TL	HITACHI	17+	SOT-343	6200	100%原裝正品現(xiàn)貨	詢價

更多BB3供應商更新時間2025-1-10 15:55:00

晶體管資料

詳細參數(shù)

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