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BB501

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

HitachiHitachi Semiconductor

日立日立公司

BB501

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

HitachiHitachi Semiconductor

日立日立公司

BB501C

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

HitachiHitachi Semiconductor

日立日立公司

BB501C

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB501CAS-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB501M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB501M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

HitachiHitachi Semiconductor

日立日立公司

BB501MAS-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Highgain;PG=21.5dBtyp.atf=900MHz ?Lownoise;NF=1.85dBtyp.atf=900MHz ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Providemi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC501

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES ?InputπFilter ?FullyRegulatedOutputs ?IndustryStandardPinouts ?5,12,24,28,and48VDCInputs ?RippleandNoiseLessThan50mVpp ?Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分類制造商

BC501S

HardToolStorageModule,S-Hook

TheBucketWorkCenterisanecosystemthatwillrevampthewayaLinemanworks.ItallowsLinemantocustomizetheirworkspace,justlikeother professionalscustomizetheirofficespace.TheKleinToolsHardToolStorageModulehasmultipleslotstoaccommodateawidevarietyofLineman tools.

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BD501

iscSiliconNPNPowerTransistors

DESCRIPTION ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=50V(Min) 80V(Min) ·HighPowerDissipation APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementary

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD501

SiliconNPNPowerTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD501B

iscSiliconNPNPowerTransistors

DESCRIPTION ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=50V(Min) 80V(Min) ·HighPowerDissipation APPLICATIONS ·Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementary

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD501B

SiliconNPNPowerTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD501N

50AMPBLOCKDIODES

SHUNYEShanghai Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

BD501P

50AMPBLOCKDIODES

SHUNYEShanghai Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

BD-A501RD

DUALDIGITLEDDISPLAYS

YSTONEYellow Stone Corp

早安股份早安股份有限公司

BD-A501RD-A

DUALDIGITLEDDISPLAYS

YSTONEYellow Stone Corp

早安股份早安股份有限公司

BD-C501RD

DUALDIGITLEDDISPLAYS

YSTONEYellow Stone Corp

早安股份早安股份有限公司

BD-C501RD-A

DUALDIGITLEDDISPLAYS

YSTONEYellow Stone Corp

早安股份早安股份有限公司

詳細(xì)參數(shù)

  • 型號:

    BB501

  • 制造商:

    HITACHI

  • 制造商全稱:

    Hitachi Semiconductor

  • 功能描述:

    Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS
24+
SOT-343
3600
絕對原裝!現(xiàn)貨熱賣!
詢價
HITACHI
16+
S0T343
6000
原裝現(xiàn)貨假一罰十
詢價
RENESAS瑞薩/HITACHI日立
24+
SOT-143SOT-23-4
9000
新進(jìn)庫存/原裝
詢價
HITACHI
23+
SOT-143
6680
全新原裝優(yōu)勢
詢價
SOT-143
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
Hitachi
22+23+
Sot-143
32742
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價
HITACH
04+
SOT143
200000
詢價
HITACH
20+
SOT143
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
HITACHI
2020+
143
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
原裝RENESAS
2023+
SOT-143
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
更多BB501供應(yīng)商 更新時間2024-12-24 16:21:00