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BD620

PNPSILICONEPIBASETRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BF620

NPNSILICONPLANARHIGHVOLTAGETRANSISTOR

FEATURES *Highbreakdownandlowsaturationvoltages APPLICATIONS *SuitableforvideooutputstagesinTVsets *Switchingpowersupplies

Zetex

Zetex Semiconductors

BF620

NPNhigh-voltagetransistors

DESCRIPTION NPNhigh-voltagetransistorinaSOT89plasticpackage. PNPcomplements:BF621andBF623. FEATURES ?Lowcurrent(max.50mA) ?Highvoltage(max.300V). APPLICATIONS ?Videooutputstages.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF620

TheSmall-signalNPNSiliconHighVoltageMedium-PowerTransistor

[PLANETA] DESCRIPTION TheBF620isanNPNsiliconepitaxialtransistordesignedforapplicationasavideooutputtodrivecolorCRT,telephony,professionalcommunicationequipmentandotherhighvoltageapplications. Ithasdynamicrangeandgoodcurrentcharacteristic. Thishighvoltagetra

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BF620

NPNhigh-voltagetransistors

DESCRIPTION NPNhigh-voltagetransistorinaSOT89plasticpackage. PNPcomplements:BF621andBF623. FEATURES ?Lowcurrent(max.50mA) ?Highvoltage(max.300V). APPLICATIONS ?Videooutputstages.

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF620

SiliconNPNepitaxialplanertype

Features ●Lowcurrent(max.50mA) ●Highvoltage(max.300V).

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

BF620

TRANSISTOR(NPN)

FEATURES ?Lowcurrent(max.50mA) ?Highvoltage(max.300V). ?Videooutputstages.

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

BF620

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES Lowcurrent(max.50mA) Highvoltage(max.300V). Videooutputstages.

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BF620

Plastic-EncapsulateTransistors

FEATURES ?Lowcurrent(max.50mA) ?Highvoltage(max.300V). ?Videooutputstages.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

BF620

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Lowcurrent(max.50mA) ●Highvoltage(max.300V). ●Videooutputstages.

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

BF620

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:500mW(Tamb=25℃) Collectorcurrent ICM:50mA Collector-basevoltage V(BR)CBO:300V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

BF620

NPNhigh-voltagetransistors

FEATURES ?Lowcurrent(max.50mA) ?Highvoltage(max.300V).

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BFP620

NPNSiliconGermaniumRFTransistor

LowNoiseSiGe:CBipolarRFTransistor ?HighlylinearlownoiseRFtransistor ?Providesoutstandingperformance forawiderangeofwirelessapplications ?BasedonInfineonsreliablehighvolume SiliconGermaniumtechnology ?IdealforCDMAandWLANapplications ?Collectordesign

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP620

NPNTransistor

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BFP620

NPNSiliconGermaniumRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP620

LowNoiseSiGe:CBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP620F

NPNSiliconGermaniumRFTransistor

NPNSiliconGermaniumRFTransistor* ?HighgainlownoiseRFtransistor ?Smallpackage1.4x0.8x0.59mm ?OutstandingnoisefigureF=0.7dBat1.8GHz OutstandingnoisefigureF=1.3dBat6GHz ?Maximumstablegain Gms=21dBat1.8GHz Gma=10dBat6GHz ?Goldmetal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP620F

NPNSiliconGermaniumRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP620F

NPNSiliconGermaniumRFTransistor

NPNSiliconGermaniumRFTransistor* ?HighgainlownoiseRFtransistor ?Smallpackage1.4x0.8x0.59mm ?OutstandingnoisefigureF=0.7dBat1.8GHz OutstandingnoisefigureF=1.3dBat6GHz ?Maximumstablegain Gms=21dBat1.8GHz Gma=10dBat6GHz ?Goldmetal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP620F

LowNoiseSiGe:CBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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更多BBOPA620KU供應(yīng)商 更新時(shí)間2025-1-17 16:30:00

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