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BFG540WSLASHXR

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG540WSLASHXR

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG540W-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG540W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG540X

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BFG540-X

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

BFG540-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG540-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG540-XR

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

BFM540

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

詳細參數

  • 型號：

    BD540YT

  • 制造商：

    PANJIT

  • 制造商全稱：

    Pan Jit International Inc.

  • 功能描述：

    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

供應商型號品牌批號封裝庫存備注價格
PANJIT
22+
TO-251
6000
十年配單,只做原裝
 詢價
PANJIT
22+
TO-251
25000
只做原裝進口現貨,專注配單
 詢價
PANJIT
25+
TO-251
37650
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
ROHM/羅姆
23+
SSOP3A 2.92×2.4, H=Max 1.12
24500
羅姆全系列在售
 詢價
ROHM/羅姆
23+
SSOP3A 2.92×2.4, H=Max 1.12
15800
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
ROHM Semiconductor
2229
na
100
Rohm授權代理,自營現貨
 詢價
ROHM Semiconductor
兩年內
50
原裝正品現貨,德為本,正為先,通天下!
 詢價
ROHM
2016+
HTSSOP24P
6523
只做原裝正品現貨!或訂貨!
 詢價
ROHM
24+
N/A
90000
一級代理商進口原裝現貨、價格合理
 詢價
ROHM
NA
185600
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
更多BD540YT供應商 更新時間2025-4-25 10:01:00

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