| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BD649 | Silicon NPN Power Transistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | |
BD649 | SILICON DARLINGTON POWER TRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647 | COMSET Comset Semiconductor | COMSET | |
BD649 | isc Silicon NPN Darlington Power Transistor DESCRIPTION ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min) ?HighDCCurrentGain:hFE=750(Min)@IC=3A ?LowSaturationVoltage ?ComplementtoTypeBD650 APPLICATIONS ?DesignedforuseascomplementaryAFpush-pulloutputstageapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
BD649 | PNP SILICON DARLINGTON TRANSISTORS NPNSILICONDARLINGTONTRANSISTORS | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | |
BD649 | NPN SILICON POWER DARLINGTONS NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | BournsBourns Electronic Solutions 伯恩斯 | Bourns | |
BD649 | NPN SILICON POWER DARLINGTONS NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | BournsBourns Electronic Solutions 伯恩斯 | Bourns | |
BD649 | NPN Silicon Darlington Transistors Eplbasepowerdarlingtontransistors(62.5W) BD643,BD645,BD647,andBD649aremonolithicNPNSiliconepibasepowerdarlingtontransistorswithdiodeandresistorsinaTO220ABplasticpackage(TOP-66).Thecollectorsofthetwotransistorsareelectricallyconnectedtothemetallicmounting | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | |
BD649 | NPN SILICON POWER DARLINGTONS PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | POINN Power Innovations Ltd | POINN | |
BD649 | NPN SILICON DARLINGTON TRANSISTORS NPNSILICONDARLINGTONTRANSISTORS | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | |
BD649 | NPN SILICON POWER DARLINGTONS | BournsBourns Electronic Solutions 伯恩斯 | Bourns | |
BD649 | SILICON DARLINGTON POWER TRANSISTORS | COMSET Comset Semiconductor | COMSET | |
40 V Withstand Voltage 3.5 A (Peak 6 A) DC Brush Motor Driver with Current Limit Features ?SinglePowerSupplyInput(RatedVoltageof40V) ?RatedOutputCurrent:3.5A ?RatedOutputCurrent(Peak):6.0A ?LowONResistanceDMOSOutput ?Forward,Reverse,Brake,OpenFunction ?DirectPWMControl ?PWMConstantCurrentControl (CurrentLimitFunction) ?Built-in | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
40 V Withstand Voltage 3.5 A (Peak 6 A) DC Brush Motor Driver with Current Limit Features ?SinglePowerSupplyInput(RatedVoltageof40V) ?RatedOutputCurrent:3.5A ?RatedOutputCurrent(Peak):6.0A ?LowONResistanceDMOSOutput ?Forward,Reverse,Brake,OpenFunction ?DirectPWMControl ?PWMConstantCurrentControl (CurrentLimitFunction) ?Built-in | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
NPN SILICON POWER DARLINGTONS NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
isc Silicon NPN Darlington Power Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
包裝：卷帶（TR） 封裝/外殼：TO-220-3 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN DARL 100V 8A TO220 | Bourns Inc. Bourns Inc. | Bourns Inc. |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-N+Darl+Di
- 性質(zhì)：
低頻或音頻放大（LF）
- 封裝形式：
直插封裝
- 極限工作電壓：
120V
- 最大電流允許值：
8A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BD701,BD901,BDW73C,BDX33C,BDX53C,FD50B,
- 最大耗散功率：
62.5W
- 放大倍數(shù)：
- 圖片代號：
B-10
- vtest：
120
- htest：
999900
- atest：
8
- wtest：
62.5
詳細參數(shù)
- 型號：
BD649
- 功能描述：
達林頓晶體管 62.5W NPN Silicon
- RoHS：
否
- 制造商：
Texas Instruments
- 配置：
Octal
- 晶體管極性：
NPN 集電極—發(fā)射極最大電壓
- VCEO：
50 V 發(fā)射極 - 基極電壓
- VEBO：
集電極—基極電壓
- 最大直流電集電極電流：
0.5 A
- 最大工作溫度：
+ 150 C
- 安裝風格：
SMD/SMT
- 封裝/箱體：
SOIC-18
- 封裝：
Reel
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-220 |
10000 |
全新 |
詢價 | |||
ST |
17+ |
TO-220 |
6200 |
詢價 | |||
STMicroelectronics |
24+ |
TO-220 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
BOURNS |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
FSC |
19+ |
TO-220F |
65973 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 | ||
NXP |
23+ |
TO-220 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
POWER |
23+ |
TO-220 |
25000 |
專做原裝正品,假一罰百! |
詢價 | ||
NXP |
21+ |
TO-220 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
FAIRCHILD |
23+ |
TO-220 |
1 |
詢價 | |||
ST |
20+ |
TO-220 |
38560 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 |
