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BY717

Veryfasthigh-voltagesoft-recoveryrectifiers

DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. Thepackageisdesignedtobeusedinaninsulatingmediumsuchasresin,oilorSF6gas. FEATU

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BY717

Veryfasthigh-voltagesoft-recoveryrectifiers

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

CH717FPT

SCHOTTKYBARRIERDIODEVOLTAGE40VoltsCURRENT0.03Ampere

CHENMKOchenmko

力勤股份有限公司

C-L717DXXXPSTX

d-subtechnicaldata

AMPHENOLAmphenol Corporation

安費(fèi)諾集團(tuán)美國安費(fèi)諾集團(tuán)

D717

SiliconEpitaxialPlanarTransistor(GENERALDESCRIPTION)

SiliconNPNhighfrequency,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose.

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

DSK-717

POWERDIVIDERS0?:2-WAY

SYNERGY

Synergy Microwave Corporation

FCX717

PNPSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *10APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *ExtremelyLowSaturationVoltageE.g.12mvTyp. *ExtremelyLowEquivalentOn-resistance;RCE(sat)77mΩat3A

Zetex

Zetex Semiconductors

FCX717

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

Features ?BVCEO=-12V ?IC=-3.0AContinuousCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FCX717

PNPSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●10Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto10Amps. ●ExtremelylowsaturationvoltageE.g.12mvTyp. ●Extremelylowequivalenton-resistance.RCE(sat)77mΩat3A.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

FCX717TA

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

Features ?BVCEO=-12V ?IC=-3.0AContinuousCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FMMT717

SwitchingTransistor

Features ●625mWpowerdissipation. ●ICCONT2.5A. ●ICupto10Apeakpulsecurrent. ●Excellenthfecharacteristicsupto10A(pulsed). ●Extremelylowsaturationvoltagee.g.10mVtyp.. ●Exhibitsextremelylowequivalenton-resistance;RCE(sat).

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

FMMT717

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features ?BVCEO>-12V ?IC=-2.5AContinuousCollectorCurrent ?ICM=-10APeakPulseCurrent ?LowSaturationVoltageE.g.-17mVMax@IC=-100mA. ?RCE(sat)=72m?at2.5Aforalowequivalenton-resistance ?625mWpowerdissipation ?hFEcharacterisedupto-10Aforhighcurrentgai

DIODES

Diodes Incorporated

FMMT717

SILICONPOWER(SWITCHING)TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat)

Zetex

Zetex Semiconductors

FMMT717

PNPTransistor

Features ●ForSwitchingandAmplifierApplications. ●ExtremelyLowSaturationVoltage ●ComplementarytoNPNType:FMMT617

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

FMMT717

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features ?BVCEO>-100V ?IC=-1AHighContinuousCollectorCurrent ?ICM=-2.5APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FMMT717QTA

12VPNPSILICONLOWSATURATIONTRANSISTORINSOT23

DIODES

Diodes Incorporated

FMMT717TA

12VPNPSILICONLOWSATURATIONTRANSISTORINSOT23

DIODES

Diodes Incorporated

FMMT717TA

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features ?BVCEO>-100V ?IC=-1AHighContinuousCollectorCurrent ?ICM=-2.5APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FMMTL717

SOT23PNPSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

Features ?BVCEO>-12V ?IC=-1.25AContinuousCollectorCurrent ?ICM=-4APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FMMTL717

PNPSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

FEATURES Verylowequivalenton-resistance;RCE(sat)=160m?at1.25A

Zetex

Zetex Semiconductors

晶體管資料

  • 型號:

    BD717

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    80V

  • 最大電流允許值:

    4A

  • 最大工作頻率:

    >1MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD647,BD899,BDW23B,BDW53B,

  • 最大耗散功率:

    36W

  • 放大倍數(shù):

    β>750

  • 圖片代號:

    B-10

  • vtest:

    80

  • htest:

    1000100

  • atest:

    4

  • wtest:

    36

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5177
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20000
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22+
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16900
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2016+
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6523
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23+
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8560
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23+
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766
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21+
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12588
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1034+
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766
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80000
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24+
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35200
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更多BD717供應(yīng)商 更新時間2025-1-3 10:02:00