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IRFM054

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM054

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFM054

SimpleDriveRequirements

IRF

International Rectifier

IRFN054

POWERMOSFETN-CHANNEL(BVdss=60V,Rds(on)=0.020ohm,Id=55A*)

RDS(on)0.020? ID55A* HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-estab

IRF

International Rectifier

IRFN054

SimpleDriveRequirements

IRF

International Rectifier

IRFN054SMD

N-CHANNELPOWERMOSFET

VDSS60V ID(cont)45A RDS(on)0.027? FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

IRFP054

PowerMOSFET(Vdss=60V,Rds(on)=0.014ohm,Id=70*A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP054

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP054

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP054

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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更多BES054K供應(yīng)商 更新時(shí)間2025-4-26 9:00:00