| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BF12 | Mounting flange | PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd 倍加福倍加福（北京）過程自動(dòng)化控制設(shè)備有限公司 | PF | |
BF12 | 包裝：盒 類別：傳感器，變送器 配件 描述：M12 DIA MOUNTING FLANGE | Pepperl+Fuchs, Inc. Pepperl+Fuchs, Inc. | Pepperl+Fuchs, Inc. | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
Dual N-channel dual gate MOS-FET DESCRIPTION TheBF1203isacombinationoftwodifferentdualgateMOS-FETamplifierswithsharedsourceandgate2leads.Thesourceandsubstrateareinterconnected. InternalbiascircuitsenableDCstabilizationandaverygoodcross-modulationperformanceduringAGC. Integrateddiodesbetwe | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
Dual N-channel dual gate MOS-FET DESCRIPTION TheBF1204isacombinationoftwoequaldualgateMOS-FETamplifierswithsharedsourceandgate2leads.Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabilizationandaverygoodcross-modulationperformanceduringAGC.Integrateddiodesbetweent | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
Dual N-channel dual gate MOS-FET DESCRIPTION TheBF1205isacombinationoftwoequaldualgateMOS-FETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierb.Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabil | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Dual N-channel dual gate MOS-FET Generaldescription TheBF1205CisacombinationoftwodualgateMOS-FETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierb. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCst | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
電視 （TV）_行輸出 （HA）_振蕩級 （O）
- 封裝形式：
直插封裝
- 極限工作電壓：
220V
- 最大電流允許值：
0.05A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
BF298,BF299,BF258,BF259,BF337,BF422,BF658,3DG170J,
- 最大耗散功率：
0.3W
- 放大倍數(shù)：
- 圖片代號：
D-8
- vtest：
220
- htest：
999900
- atest：
0.05
- wtest：
0.3
產(chǎn)品屬性
- 產(chǎn)品編號：
BF12
- 制造商：
Pepperl+Fuchs, Inc.
- 類別：
傳感器，變送器 > 配件
- 包裝：
盒
- 配件類型：
安裝法蘭
- 描述：
M12 DIA MOUNTING FLANGE
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
原廠 |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢 |
詢價(jià) | ||
Pepperl + Fuchs |
2022+ |
6 |
全新原裝 貨期兩周 |
詢價(jià) | |||
115 |
9051 |
05+ |
1 |
原廠原裝 |
詢價(jià) | ||
PHI |
SOT23-4 |
2978 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
PHILIPS |
1993 |
2899 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
PHILIPS |
1215+ |
SOT-143 |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng). |
詢價(jià) | ||
NXP |
2016+ |
SOT-363 |
72000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
NXP |
24+ |
SOT343 |
5000 |
深圳現(xiàn)貨價(jià)格優(yōu)勢 |
詢價(jià) | ||
PHI |
23+ |
SOT143 |
12300 |
詢價(jià) | |||
PHILIPS |
23+ |
SOT-343 |
31000 |
全新原裝現(xiàn)貨 |
詢價(jià) |
