零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BF410 | LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange. | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | |
N-channel silicon field-effect transistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange. | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
N-channel silicon field-effect transistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange. | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
N-channel silicon field-effect transistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange. | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
N-channel silicon field-effect transistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange. | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
NPN22GHzwidebandtransistor DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Veryhighpowergain ?Lownoisefigure ?Hightransitionfrequency ?Emitteristhermallead ?Lowfeedbackcapacitance. APPLI | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN22GHzwidebandtransistor DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Veryhighpowergain ?Lownoisefigure ?Hightransitionfrequency ?Emitteristhermallead ?Lowfeedbackcapacitance. APPLI | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?Lowcurrentdevicesuitablee.g.forhandhelds ?Forhighfrequencyoscillatorse.g.DROforLNB ?ForISMbandapplicationslike AutomaticMeterReading,Sensorsetc. ?TransitfrequencyfT=25GHz ?Pb-free(RoHScompliant)andhalogen-freepa | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
BandpassFilter | MINI Mini-Circuits | MINI | ||
ULTRA-FASTRECOVERY30to35AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING | edi Electronic devices inc. | edi | ||
modulesfromLairdaredesignedtomeettheneedsofdeveloperswhowishtoaddrobust | LSTD Laird Tech Smart Technology | LSTD | ||
High-sideswitch PROFET? *High-sideswitch *Short-circuitprotection *Overtemperatureprotection *Overloadprotection *Loaddumpprotection?) *Undervoltageandovervolla?esshutdownwithauto-restartandhysteresis *Reversebatteryprotection *Inputandstatusprotection *Clampofnegativeoutput | SIEMENSSiemens Semiconductor Group 西門子德國(guó)西門子股份公司 | SIEMENS | ||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION TheBUF410ismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapacity.TheyuseaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingawideRBSOA. TheBUFseriesisdesign | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighVoltage ·HighSpeedSwitching APPLICATIONS ·Designedforuseinhigh-frequencypowersuppliesandmotorcontrolapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號(hào):
BF410
- 制造商:
INFINEON
- 制造商全稱:
Infineon Technologies AG
- 功能描述:
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
N/A |
2023+ |
NULL |
8700 |
原裝現(xiàn)貨 |
詢價(jià) | ||
PHILIPS |
24+ |
TO-92 |
1300 |
詢價(jià) | |||
PHI |
05+ |
原廠原裝 |
28051 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
PHILIPS/飛利浦 |
23+ |
TO-92 |
10000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋?kù)存,詳 |
詢價(jià) | ||
PHILIPS |
22+ |
TO-92 |
6000 |
全新原裝品牌專營(yíng) |
詢價(jià) | ||
NXP/恩智浦 |
22+ |
TO-92 |
34137 |
只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
PHILIPS |
23+ |
2800 |
正品原裝貨價(jià)格低qq:2987726803 |
詢價(jià) | |||
ON |
23+ |
TO-92 |
2418 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
BBT |
1736+ |
DIP |
15238 |
原廠優(yōu)勢(shì)渠道 |
詢價(jià) | ||
sie |
24+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) |
相關(guān)規(guī)格書
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- BF410C
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- BF423ZL1G
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相關(guān)庫(kù)存
更多- BF410B
- BF410D
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- BF4183-20B
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- BF420/D
- BF420A3S
- BF420L
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- BF420ZL1G
- BF421 RF
- BF421_02
- BF421_10
- BF421-AP
- BF421S
- BF421ZL1G
- BF422 RF
- BF422,116
- BF422_10
- BF422A3
- BF422G
- BF422RL1
- BF422S
- BF422ZL1
- BF423
- BF423,112
- BF423A3
- BF423G
- BF423S
- BF423ZL1
- BF4275-20B
- BF4418-20B/DK01
- BF450/RA
- BF455-UV1
- BF469
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