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BFG520W

NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520W

Marking：N3；Package：SOT-343N；NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG520W

Marking：N3；Package：SOT-343N；RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG520W

NPN 9 GHz wideband transistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BFG520W/X

Marking：N4；Package：SOT-343N；NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520W/X

Marking：N4；Package：SOT-343N；NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG520WSLASHX

Marking：N4；Package：SOT-343N；NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG520WSLASHX

Marking：N4；Package：SOT-343N；NPN 9 GHz wideband transistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG520W-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG520W_15

NPN 9 GHz wideband transistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

詳細參數(shù)

  • 型號：

    BFG520W

  • 功能描述：

    射頻雙極小信號晶體管 TAPE-7 TNS-RFSS

  • RoHS：

    否

  • 制造商：

    NXP Semiconductors

  • 配置：

    Single

  • 晶體管極性：

    NPN

  • 最大工作頻率：

    7000 MHz 集電極—發(fā)射極最大電壓

  • VCEO：

    15 V 發(fā)射極 - 基極電壓

  • VEBO：

    2 V

  • 集電極連續(xù)電流：

    0.15 A

  • 功率耗散：

    1000 mW 直流集電極/Base Gain hfe

  • 最大工作溫度：

    + 150 C

  • 封裝/箱體：

    SOT-223

  • 封裝：

    Reel

供應商型號品牌批號封裝庫存備注價格
NXP(恩智浦)
24+
標準封裝
22048
全新原裝正品/價格優(yōu)惠/質(zhì)量保障
 詢價
NXP
23+
SOT343
12000
原裝正品,假一罰十
 詢價
NXP
23+
SOT343
27000
全新原裝正品
 詢價
PHI
05+
原廠原裝
18051
只做全新原裝真實現(xiàn)貨供應
 詢價
NXP
23+
SOT-343
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
NXP
1822+
SOT-343
6852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
NXP
21+
SOT-343
12588
原裝正品,自己庫存 假一罰十
 詢價
NXP
24+
SOT-343
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
PHILIPS
1922+
SOT343
90000
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
NXP(恩智浦)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持
 詢價
更多BFG520W供應商 更新時間2025-4-24 22:59:00

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