BFP650H6327中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書

Product Brief

The BFP650 is a high linearity wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 150 mA. With its high linearity at currents as low as 30 mA the device supports energy efficient designs. The typical transition frequency is approximately 42 GHz, hence the device offers high power gain at frequencies up to 5 GHz in amplifier applications. the device is housed in an easy to use plastic package with visible leads.

Features

? Linear low noise driver amplifier for RF frontends up to 5 GHz

based on Infineon′s reliable, high volume SiGe:C wafer technology

? Output compression point OP1dB = 17 dBm

at 70 mA, 3 V, 2.4 GHz, 50 ? system

? Output 3rd order intermodulation point OIP3 = 30 dBm

at 70 mA, 3 V, 2.4 GHz, 50 ? system

? Maximum available gain Gma = 17.5 dB at 70 mA, 3 V, 2.4 GHz

? Minimum noise figure NFmin = 1 dB at 30 mA, 3 V, 2.4 GHz

? Easy to use Pb-free (RoHS compliant) and halogen-free standard

package with visible leads

? Qualification report according to AEC-Q101 available

Application Examples

Driver amplifier

? ISM bands 434 and 868 MHz

? 1.9 GHz cordless phones

? CATV LNA

Transmitter driver amplifier

? 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX

Output stage LNA for active antennas

? TV, GPS, SDARS

? 2.4 / 5 GHz WLAN

? 2.4 / 3.5 / 5 GHz WiMAX, etc

Suitable for 5 - 10.5 GHz oscillators