BFP750中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書

Product Brief

The BFP750 is a wideband linear low noise NPN bipolar RF transistor. The device is based on Infineons reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 120 mA. With its high linearity at currents as low as 20 mA the device supports energy efficient designs. The typical transistor frequency is approximately 41 GHz, hence the device offers high power gain at frequencies up to 7 GHz in amplifiers applications. The device is housed in an easy to use plastic package with visible leads.

Features

? Highly linear low noise amplifier for all RF frontends

up to 5.5 GHz

? Output compression point OP1dB = 16 dBm

at 60 mA, 3 V, 1.9 GHz, 50 ? system

? Output 3rd order intermodulation point OIP3 = 30 dBm

at 60 mA, 3 V, 1.9 GHz, 50 ? system

? Maximum gain Gms = 19 dB at 60 mA, 3 V, 3.5 GHz

? Minimum noise figure NFmin = 0.9 dB at 30 mA, 3 V, 1.9 GHz

? Based on Infineon′s reliable, high volume SiGe:C wafer technology

? Easy to use Pb-free (RoHS compliant) and halogen-free standard

package with visible leads

? Qualification report according to AEC-Q101 available

Application Examples

Driver amplifier

? 1.9 GHz and 5.8 GHz cordless phones

Transmitter driver amplifier

? 2.4 GHz WLAN / Bluetooth / WiMAX

? 3.5 GHz WiMax

? 5.5 GHz WLAN / WiMAX

Output stage LNA for active antennas

? GPS, SDARS

? 2.4 / 5.5 GHz WLAN

? 2.4 / 3.5 / 5.5 GHz WiMAX, etc

Suitable for 8 - 12 GHz oscillators