BLA6H1011-600分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

BLA6H1011-600屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的BLA6H1011-600晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the

1030 MHz to 1090 MHz range.

Features and benefits

? Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply

voltage of 48 V, an IDq of 100 mA, a tp of 50 ?s with ? of 2 :

? Output power = 600 W

? Power gain = 17 dB

? Efficiency = 52

? Easy power control

? Integrated ESD protection

? High flexibility with respect to pulse formats

? Excellent ruggedness

? High efficiency

? Excellent thermal stability

? Designed for broadband operation (1030 MHz to 1090 MHz)

? Internally matched for ease of use

? Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

Applications

? 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the

1030 MHz to 1090 MHz frequency range