BLC10G27LS-320AVT分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

BLC10G27LS-320AVT屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的BLC10G27LS-320AVT晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

320 W LDMOS packaged asymmetrical Doherty power transistor for base station

applications at frequencies from 2500 MHz to 2700 MHz.

Features and benefits

? Excellent ruggedness

? High efficiency

? Low thermal resistance providing excellent thermal stability

? Decoupling leads to enable improved video bandwidth

? Lower output capacitance for improved performance in Doherty applications

? Designed for low memory effects providing excellent pre-distortability

? Internally matched for ease of use

? Integrated ESD protection

? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

? RF power amplifier for W-CDMA base stations and multi carrier applications in the

2500 MHz to 2700 MHz frequency range