BLF6G10L-40BRN分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz.

Features and benefits

■ Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 390 mA:

◆ Average output power = 2.5 W

◆ Power gain = 23.0 dB

◆ Efficiency = 15.0

◆ ACPR = ?42.5 dBc

■ Easy power control

■ Integrated ESD protection

■ Enhanced ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (728 MHz to 960 MHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

■ Integrated current sense

Applications

■ RF power amplifiers for W-CDMA base stations and multi carrier GSM and LTE applications in the 728 MHz to 960 MHz frequency range