首頁 >BSS123-MR>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

BSS123N

OptiMOS??Small-Signal-Transistor

Features ?N-channel ?Enhancementmode ?Logiclevel(4.5Vrated) ?Avalancherated ?QualifiedaccordingtoAECQ101 ?100lead-free;RoHScompliant,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123Q

N-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage HighDrain-SourceVoltageRating TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS123Qissuitableforautomotiveapplicat

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInp

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?HighDrain-SourceVoltageRating ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice,Note3and4

DIODES

Diodes Incorporated

BSS123W

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Description ThisN-channelenhancementmodefieldeffecttransistorisproducedusinghighcelldensity,trenchMOSFETtechnology.Thisproductminimizeson-stateresistancewhileprovidingrugged,reliableandfastswitchingperformance.Thisproductisparticularlysuitedforlow-voltage,low-c

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BSS123W

SOT-323Plastic-EncapsulateMOSFETS

FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS123W

N-ChannelEnhancementModeMOSFET

FUTUREWAFER

FutureWafer Tech Co.,Ltd

BSS123W

N-ChannelMOSFET

FEATURE ?SurfaceMountPackage ?HighDensityCellDesignforExtremelyLowRDS(ON) ?VoltageControlledSmallSignalSwitch ?RuggedandReliable APPLICATION ?SmallServoMotorControls ?PowerMOSFETGateDrivers ?SwitchingApplication

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS123WQ

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpe

DIODES

Diodes Incorporated

BUL123S

SiliconNPNtransistorinaTO-92PlasticPackage.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

BYD123

Ultrafastlow-lossrectifier

DESCRIPTION CavityfreecylindricalglassSOD81packagethroughImplotec?technology.Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES ?Glasspassivated ?Highmaximumoperatingtemperature ?Lowleakagecur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CD123D-B

CD123D-B1xRSchottkyBarrierChipDiodeSeries

Features ■RoHScompliant* ■Leadlesschipform ■Highcurrentcapability ■Lowforwardvoltage ■Halogenfree** Applications ■SwitchModePowerSupplies(SMPS) ■Portableequipmentbatteries ■Highfrequencyrectification ■DC/DCconverters ■Telecommunications

BournsBourns Electronic Solutions

伯恩斯

CEP123

POWERINDUCTORS(SMDType)

SUMIDASumida America Components Inc.

勝美達電子

CFPT-123

VCTCXOSpecification

IQD

IQD Frequency Products Ltd

CHDTA123EEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbia

CHENMKOchenmko

力勤股份有限公司

CHDTA123EKPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-59/SOT346) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbia

CHENMKOchenmko

力勤股份有限公司

CHDTA123EMPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-723) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbiasres

CHENMKOchenmko

力勤股份有限公司

CHDTA123EUPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123JEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

詳細參數(shù)

  • 型號：

    BSS123-MR

  • 功能描述：

    MOSFET BSS123 MINIREEL 500PCS

供應商型號品牌批號封裝庫存備注價格
INFINEON
2016+
SOT23
81000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
INFINEON
23+
SOT-23
121212
原裝正品現(xiàn)貨
 詢價
Infineon/英飛凌
1937+
SOT23-3
9852
只做進口原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
Infineon
20+
SOT23
43000
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
英飛凌
21+
PG-SOT23-3
6000
絕對原裝現(xiàn)貨
 詢價
INFINE0N
21+
SOT-23
32568
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營
 詢價
INFINEON/英飛凌
21+
SOT23
20000
只做正品原裝現(xiàn)貨
 詢價
Infineon/英飛凌
21+
SOT-23
3000
原裝現(xiàn)貨假一賠十
 詢價
英飛凌 | Infineon
21+
SOT23-3
3800
詢價
Infineon(英飛凌)
23+
NA
20094
正納10年以上分銷經驗原裝進口正品做服務做口碑有支持
 詢價
更多BSS123-MR供應商 更新時間2024-12-27 8:30:00

相關規(guī)格書

更多

相關庫存

更多