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BSS138BKW

60V,320mAN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ■Logic-levelcompatible ■Veryfastswitching ■TrenchMOSFETtechnology ■ESDprotection

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSS138BKW

Nch60V380mASmallSignalMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BSS138BKW

60V,320mAN-channelTrenchMOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ?ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BSS138BKW

nullN-ChannelEnhancementModeMOSFET

Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

BSS138BWAHZG

Nch60V380mASmallSignalMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BSS138C

AdvancedMOSFETprocesstechnology

FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description: Itutilizesthelates

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

BSS138-CAR

Plastic-EncapsulateMOSFETS

APPLICATION DirectLogic-LevelInterface:TTL/CMOS Drivers:Relays,Solenoids,Lamps,Hammers,Display, Memories,Transistors,etc. BatteryOperatedSystems Solid-StateRelays FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible -CARforautomotiveandother

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS138CR

AdvancedMOSFETprocesstechnology

FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description: Itutilizesthelates

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

BSS138DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●Fast

DIODES

Diodes Incorporated

BSS138DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS138DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?AvailableinLeadFree/RoHSCompliantVersion(Note4) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes5and6)

DIODES

Diodes Incorporated

BSS138DW

DualN-Channel60V(D-S)MOSFET

?LowOn-Resistance:1.5 FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS138DW

DualN-Channel60V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowOn-Resistance:2.5Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS138DW

DualN-ChannelMOSFET

Feature ?HighdensitycelldesignforextremelylowRDS(on) ?RuggedandRelaible Application ?DirectLogic-LevelInterface:TTL/CMOS ?BatteryOperatedSystems ?Solid-StateRelays

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS138DWK

50VN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol

DIODES

Diodes Incorporated

BSS138DWQ

LowOn-Resistance

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchin

DIODES

Diodes Incorporated

BSS138-G

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BSS138-G

MOSFET

COMCHIPComchip Technology

典琦典琦科技股份有限公司

BSS138-G

MOSFET

COMCHIPComchip Technology

典琦典琦科技股份有限公司

BSS138-HF

N-ChannelMOS

GENERALFEATURES ●VDS=50V,ID=0.22A ●RDS(ON)

E-CMOSE-CMOS Corporation

飛虹高科飛虹高科股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MCC/美微科
24+
SOT-523
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低
 詢價(jià)
ROHM
21+
SOT-23
2600
全新原裝鄙視假貨15118075546
 詢價(jià)
ROHM(羅姆)
23+
SOT23(TO236)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
ROHM Semiconductor
2145
100
Rohm授權(quán)代理,自營現(xiàn)貨
 詢價(jià)
ROHM(羅姆)
23+
SOT23
6000
誠信服務(wù)，絕對(duì)原裝原盤
 詢價(jià)
24+
N/A
56000
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
ROHM
23+
SOT23
2100
原裝正品現(xiàn)貨
 詢價(jià)
Nexperia/安世
22+
SOT23
300000
原廠原裝正品現(xiàn)貨
 詢價(jià)
Nexperia USA Inc.
21+
TO-236AB
10000
進(jìn)口原裝!長期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營)!!
 詢價(jià)
VASHAY
23+
QFN8
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
更多BSS138BKT供應(yīng)商 更新時(shí)間2025-1-8 10:33:00

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