首頁(yè) >BSS138BKW-BX>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
Nch60V380mASmallSignalMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
AdvancedMOSFETprocesstechnology FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description: Itutilizesthelates | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
Plastic-EncapsulateMOSFETS APPLICATION DirectLogic-LevelInterface:TTL/CMOS Drivers:Relays,Solenoids,Lamps,Hammers,Display, Memories,Transistors,etc. BatteryOperatedSystems Solid-StateRelays FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible -CARforautomotiveandother | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
AdvancedMOSFETprocesstechnology FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description: Itutilizesthelates | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●Fast | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?AvailableinLeadFree/RoHSCompliantVersion(Note4) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes5and6) | DIODES Diodes Incorporated | DIODES | ||
DualN-Channel60V(D-S)MOSFET ?LowOn-Resistance:1.5 FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
DualN-Channel60V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowOn-Resistance:2.5Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
DualN-ChannelMOSFET Feature ?HighdensitycelldesignforextremelylowRDS(on) ?RuggedandRelaible Application ?DirectLogic-LevelInterface:TTL/CMOS ?BatteryOperatedSystems ?Solid-StateRelays | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Nexperia USA Inc. |
21+ |
SC-70 |
5000 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!! |
詢(xún)價(jià) | ||
Nexperia USA Inc. |
2022+ |
SC-70,SOT-323 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo) |
詢(xún)價(jià) | ||
NEXPERIA/安世 |
23+ |
SOT323 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
NEXPERIA/安世 |
2022 |
SOT323 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
ROHM |
21+ |
SOT-323 |
2850 |
全新原裝鄙視假貨15118075546 |
詢(xún)價(jià) | ||
ROHM(羅姆) |
23+ |
SOT323(SC70) |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢(xún)價(jià) | ||
ROHM Semiconductor |
2211 |
2800 |
Rohm授權(quán)代理,自營(yíng)現(xiàn)貨 |
詢(xún)價(jià) | |||
ROHM(羅姆) |
23+ |
SOT323 |
6000 |
誠(chéng)信服務(wù),絕對(duì)原裝原盤(pán) |
詢(xún)價(jià) | ||
24+ |
N/A |
69000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢(xún)價(jià) | |||
ROHM Semiconductor |
兩年內(nèi) |
2800 |
原裝正品現(xiàn)貨,德為本,正為先,通天下! |
詢(xún)價(jià) |
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