首頁 >BSS138BKW-TP>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Nch60V380mASmallSignalMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
AdvancedMOSFETprocesstechnology FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description: Itutilizesthelates | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
Plastic-EncapsulateMOSFETS APPLICATION DirectLogic-LevelInterface:TTL/CMOS Drivers:Relays,Solenoids,Lamps,Hammers,Display, Memories,Transistors,etc. BatteryOperatedSystems Solid-StateRelays FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible -CARforautomotiveandother | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
AdvancedMOSFETprocesstechnology FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description: Itutilizesthelates | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微電子新硅能微電子(蘇州)有限公司 | SILIKRON | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●Fast | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?AvailableinLeadFree/RoHSCompliantVersion(Note4) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes5and6) | DIODES Diodes Incorporated | DIODES | ||
DualN-Channel60V(D-S)MOSFET ?LowOn-Resistance:1.5 FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
DualN-Channel60V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowOn-Resistance:2.5Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
DualN-ChannelMOSFET Feature ?HighdensitycelldesignforextremelylowRDS(on) ?RuggedandRelaible Application ?DirectLogic-LevelInterface:TTL/CMOS ?BatteryOperatedSystems ?Solid-StateRelays | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
50VN-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol | DIODES Diodes Incorporated | DIODES | ||
LowOn-Resistance Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchin | DIODES Diodes Incorporated | DIODES | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
MOSFET | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
N-ChannelMOS GENERALFEATURES ●VDS=50V,ID=0.22A ●RDS(ON) | E-CMOSE-CMOS Corporation 飛虹高科飛虹高科股份有限公司 | E-CMOS | ||
Small-SignalTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NCEN-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
NXP/恩智浦 |
22+ |
SOT-323 |
354000 |
詢價(jià) | |||
NEXPERIA/安世 |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
NEXPERIA/安世 |
2022 |
SOT-23 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
NEXPERIA/安世 |
22+ |
SOT-23 |
62420 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
NXP/恩智浦 |
23+ |
SOD-323 |
6000 |
只有原裝正品現(xiàn)貨原標(biāo)原盒支持實(shí)單 |
詢價(jià) | ||
ON/安森美 |
2021+ |
20 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
ROHM |
21+ |
UMT3 |
3000 |
全新原裝鄙視假貨15118075546 |
詢價(jià) | ||
ROHM(羅姆) |
23+ |
SOT323(SC70) |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
ROHM Semiconductor |
2106 |
2920 |
Rohm授權(quán)代理,自營現(xiàn)貨 |
詢價(jià) |
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