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CAT28F512NI-90T中文資料Catalyst數(shù)據(jù)手冊(cè)PDF規(guī)格書

CAT28F512NI-90T
廠商型號(hào)

CAT28F512NI-90T

功能描述

512K-Bit CMOS Flash Memory

文件大小

97.22 Kbytes

頁(yè)面數(shù)量

14 頁(yè)

生產(chǎn)廠商 Catalyst Semiconductor
企業(yè)簡(jiǎn)稱

Catalyst

中文名稱

Catalyst Semiconductor官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-9 16:06:00

CAT28F512NI-90T規(guī)格書詳情

DESCRIPTION

The CAT28F512 is a high speed 64K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.

It is pin and Read timing compatible with standard EPROM and EEPROM devices. Programming and Erase are performed through an operation and verify algorithm. The instructions are input via the I/O bus, using a two write cycle scheme. Address and Data are latched to free the I/O bus and address bus during the write operation.

FEATURES

■ Fast Read Access Time: 90/120/150 ns

■ Low Power CMOS Dissipation:

–Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels)

–Standby: 100 μA max (CMOS levels)

■ High Speed Programming:

–10 μs per byte

–1 Sec Typ Chip Program

■ 12.0V ± 5 Programming and Erase Voltage

■ Electronic Signature

■ Commercial, Industrial and Automotive Temperature Ranges

■ Stop Timer for Program/Erase

■ On-Chip Address and Data Latches

■ JEDEC Standard Pinouts:

–32-pin DIP

–32-pin PLCC

–32-pin TSOP ( 8 x 20)

■ 100,000 Program/Erase Cycles

■ 10 Year Data Retention

■ Green Package Options Available

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