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CEB15N60LN

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,13.6A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V@TJmax,13.4A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU15N60LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,13.6A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU15N60SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V@TJmax,13.4A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

DTGF15N60

FastSwitching

Features LowVesa FastSwitching HighRuggedness Short-circuitRated Applications HomeAppliances ompressors/AirConditioning MotorControl GeneralPurposeInverters

DINTEK

DinTek Semiconductor Co,.Ltd

DTGK15N60

FastSwitching

Features LowVesa FastSwitching HighRuggedness Short-circuitRated Applications HomeAppliances ompressors/AirConditioning MotorControl GeneralPurposeInverters

DINTEK

DinTek Semiconductor Co,.Ltd

DTGP15N60

FastSwitching

Features LowVesa FastSwitching HighRuggedness Short-circuitRated Applications HomeAppliances ompressors/AirConditioning MotorControl GeneralPurposeInverters

DINTEK

DinTek Semiconductor Co,.Ltd

FGP15N60UNDF

600V,15AShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF15N60UNDF

600V,15AShortCircuitRatedIGBT

GeneralDescription UsingadvancedNPTIGBTtechnology,Fairchild’stheNPTIGBTsoffertheoptimumperformanceforlow-powerinverterdrivenapplicationswherelow-lossesandshort-circuitruggednessfeaturesareessential,suchassewingmachine,CNC,motorcontrolandhomeappliances. Features

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G15N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

G15N60HS

HighSpeedIGBTinNPT-technology

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

G15N60HS

HighSpeedIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

HMG15N60

600V,15A,TrenchFSIIIGBT

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMG15N60D

600V,15A,TrenchFSIIIGBT

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
CET/華瑞
23+
TO-263
10000
公司只做原裝正品
詢價(jià)
CET
TO-263
22+
6000
十年配單,只做原裝
詢價(jià)
CET
23+
TO-263
6000
原裝正品,支持實(shí)單
詢價(jià)
CET/華瑞
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
詢價(jià)
CET
24+
TO-263
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價(jià)
SR
23+
T0-263
5000
原裝正品,假一罰十
詢價(jià)
SR
21+
TO251
10026
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
SR
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
詢價(jià)
SR
23+
TO251
10000
原裝正品現(xiàn)貨
詢價(jià)
CET
24+
50000
詢價(jià)
更多CEB15N60LN供應(yīng)商 更新時(shí)間2024-11-17 10:05:00