零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
CED04N6 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V,3.4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES 600V,2.5A,RDS(ON)=2.5?@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandlingcapability. TO-220Ffull-pakforthroughhole | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,3.4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,3.4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
CET/華瑞 |
23+ |
TO-251 |
10000 |
公司只做原裝正品 |
詢(xún)價(jià) | ||
CET/華瑞 |
2022+ |
TO-251 |
50000 |
原廠代理 終端免費(fèi)提供樣品 |
詢(xún)價(jià) | ||
CET |
23+ |
TO-251 |
6000 |
原裝正品,支持實(shí)單 |
詢(xún)價(jià) | ||
CET/華瑞 |
2022+ |
TO-251 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢(xún)價(jià) | ||
CET |
24+ |
TO-251 |
12300 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢(xún)價(jià) | ||
CET/華瑞 |
21+ |
TO-251 |
30000 |
只做正品原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
CET/華瑞 |
23+ |
TO251 |
38888 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) | ||
CET |
2020+ |
TO-251 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢(xún)價(jià) | ||
CET |
21+ |
TO-251 |
2357 |
原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
華瑞 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) |
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