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CEM4481

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-4.6A,RDS(ON)=66mΩ@VGS=-10V. RDS(ON)=105mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4487

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-4.2A,RDS(ON)=66mΩ@VGS=-10V. RDS(ON)=105mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4532

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

FEATURES ■30V,4.7A,RDS(ON)=55mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■-30V,-4.5A,RDS(ON)=80mΩ@VGS=-10V. RDS(ON)=135mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4539

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■30V,5.8A,RDS(ON)=37m?@VGS=10V. RDS(ON)=55m?@VGS=4.5V. ■-30V,-4.9A,RDS(ON)=5365m?@VGS=-10V. RDS(ON)=95m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4804

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●30V,7.9A,RDS(ON)=20m?@VGS=10V. RDS(ON)=30m@V?GS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4808

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,9A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4936

Dual N-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4948

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-60V,-3.1A,RDS(ON)=120m?@VGS=-10V. RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4948

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-3.1A,RDS(ON)=120mW@VGS=-10V. RDS(ON)=150mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4953

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■-30V,-4.9A,RDS(ON)=53m?@VGS=-10V. -3.6A,RDS(ON)=95m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage

CETChino-Excel Technology

華瑞華瑞股份有限公司

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更多CEM供應商 更新時間2025-4-23 15:01:00

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