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CEM4228

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,6.3A,RDS(ON)=30m?@VGS=10V. RDS(ON)=45m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4228

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,6.3A,RDS(ON)=30mW@VGS=10V. RDS(ON)=45mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4228

Dual N-Channel 60 V (D-S) 175 ?C MOSFET

FEATURES ?TrenchFET?powerMOSFET ?100RgandUIStested

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CEM4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V,6.1A,RDS(ON)=32mW@VGS=10V. RDS(ON)=46mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. -40V,-5.2A,RDS(ON)=43mW@VGS=10V. RDS(ON)=65mW@VGS=

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■40V,6.1A,RDS(ON)=32m?@VGS=10V. RDS(ON)=46m?@VGS=4.5V. ■-40V,-5.2A,RDS(ON)=43m?@VGS=10V. RDS(ON)=65m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4269A

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V,6.0A,RDS(ON)=34mW@VGS=10V. RDS(ON)=49mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. -40V,-5.2A,RDS(ON)=43mW@VGS=10V. RDS(ON)=65mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

40V,6.1A,RDS(ON)=32mW@VGS=10V. FEATURES RDS(ON)=46mW@VGS=4.5V. -40V,-4.3A,RDS(ON)=66mW@VGS=-10V. RDS(ON)=105mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisa

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■40V,6.1A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-4.3A,RDS(ON)=66mΩ@VGS=-10V. RDS(ON)=105mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabil

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4282

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,6.6A,RDS(ON)=36m?@VGS=10V. RDS(ON)=48m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ???????■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-6A,RDS(ON)=42m?@VGS=-10V. RDS(ON)=65m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

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AT/C-MAX
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HAMOS/漢姆
23+
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全新原裝正品現(xiàn)貨,支持訂貨
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23+
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更多CEM供應(yīng)商 更新時間2025-4-23 15:01:00

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