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CEM3117

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-9.5A,RDS(ON)=14mW@VGS=-10V. RDS(ON)=18mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. DC-DCswitching,DCpowerswitch Applications

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3118

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,10.2A,RDS(ON)=12mW@VGS=10V. RDS(ON)=16mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3119

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V,8A,RDS(ON)=20mW@VGS=10V. FEATURES RDS(ON)=30mW@VGS=4.5V. -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=30mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3119A-1

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V,8A,RDS(ON)=20mW@VGS=4.5V. FEATURES -30V,-6A,RDS(ON)=34mW@VGS=-10V. RDS(ON)=52mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=26mW@VGS=2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3120

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,10A,RDS(ON)=15m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3128

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,9A,RDS(ON)=16m?@VGS=10V. RDS(ON)=23m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3128

Dual N-Channel 30 V (D-S) MOSFET

FEATURES ?TrenchFET??PowerMOSFET ?100RgTested ?100UISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?NotebookSystemPower ?LowCurrentDC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CEM3133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-9.3A,RDS(ON)=18mW@VGS=-10V. RDS(ON)=26mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3137

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-8.3A,RDS(ON)=18mW@VGS=-10V. RDS(ON)=26mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3138

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,9.1A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=21mΩ@VGS=4.5V. ■30V,6.9A,RDS(ON)=26mΩ@VGS=10V. RDS(ON)=35mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

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更多CEM供應(yīng)商 更新時間2025-4-23 11:17:00

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