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CEM-1612

MAGNETIC BUZZER TRANSDUCER

FEATURES ?throughhole ?12Vrated ?externallydriven

CUID

CUI Devices

CEM-1612_V01

MAGNETIC BUZZER TRANSDUCER

FEATURES ?throughhole ?12Vrated ?externallydriven

CUI

CUI Inc.

CEM2005

Dual Enhancement Mode Field Effect Transistor(N and Channel)

FEATURES ■20V,5A,RDS(ON)=32m?@VGS=4.5V. RDS(ON)=43m?@VGS=2.5V. ■-20V,-4A,RDS(ON)=95m?@VGS=-4.5V. RDS(ON)=125m?@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM2030A

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■20V,6A,RDS(ON)=30m?@VGS=4.5V. RDS(ON)=40m?@VGS=2.5V. ■-20V,-4.3A,RDS(ON)=90m?@VGS=-4.5V. RDS(ON)=120m?@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM2082

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,11A,RDS(ON)=12m?@VGS=4.5V. RDS(ON)=18m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM2108

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,9.5A,RDS(ON)=14m?@VGS=4.5V. RDS(ON)=20m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM2133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-10A,RDS(ON)=18mΩ@VGS=-4.5V. RDS(ON)=27mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM2133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-10A,RDS(ON)=18mW@VGS=-4.5V. RDS(ON)=27mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM2152

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,9.0A,RDS(ON)=20mW@VGS=4.5V. RDS(ON)=26mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM2163

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-8.9A,RDS(ON)=20mW@VGS=-4.5V. RDS(ON)=30mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應商型號品牌批號封裝庫存備注價格
firefly workshop
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NA
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萬三科技,秉承原裝,購芯無憂
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DNA
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公司現貨,有掛就有貨。
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十七年VIP會員,誠信經營，一手貨源，原裝正品可零售！
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只做原裝公司現貨
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全新原裝正品現貨,支持訂貨
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21+
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公司只售原裝,支持實單
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更多CEM供應商 更新時間2025-4-22 15:15:00

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