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CEM3062

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,14A,RDS(ON)=7.8mW@VGS=10V. RDS(ON)=11.5mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3082

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,12A,RDS(ON)=10.5mΩ@VGS=10V. RDS(ON)=15.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3083

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-13A,RDS(ON)=10mΩ@VGS=-10V. RDS(ON)=15.5mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3083A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-13A,RDS(ON)=10mW@VGS=-10V. RDS(ON)=15.5mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,12A,RDS(ON)=12mW@VGS=10V. RDS(ON)=19mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3108

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,10A,RDS(ON)=13mW@VGS=10V. RDS(ON)=20mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3109

Dual Enhancement Mode Field Effect Transistor

FEATURES ■30V,10A,RDS(ON)=14mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3109

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V,10A,RDS(ON)=14mW@VGS=10V. RDS(ON)=20mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=30mW@VGS

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3112

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,11.9A,RDS(ON)=11mW@VGS=10V. RDS(ON)=15mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3115

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-12A,RDS(ON)=12mW@VGS=-10V. RDS(ON)=16mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

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firefly workshop
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
 詢價(jià)
Firefly
2022+
DNA
199
公司現(xiàn)貨,有掛就有貨。
 詢價(jià)
QUECTEL
23+
3G
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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QUECTEL
20+
MOudle
40
原裝
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AT/C-MAX
23+
CHIP
3000
原裝正品假一罰百!可開增票!
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AT/C-MAX
22+
CHIP
3000
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng)，一手貨源，原裝正品可零售！
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CET
24+
SOP-8
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
HAMOS/漢姆
23+
SOP-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
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CET
23+
SOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
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CET/華瑞
21+
SOP8
13880
公司只售原裝,支持實(shí)單
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更多CEM供應(yīng)商 更新時(shí)間2025-4-22 15:15:00

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