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CEM3254

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,7.8A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3254L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,8.0A,RDS(ON)=25mW@VGS=10V. RDS(ON)=28mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=35mW@VGS=2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3258

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,7A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3258

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,7A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3258A

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,7A,RDS(ON)=24mW@VGS=10V. RDS(ON)=35mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3258L

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,6.9A,RDS(ON)=28mW@VGS=10V. RDS(ON)=34mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. RDS(ON)=45mW@VGS=2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3259

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V,7.6A,RDS(ON)=22mW@VGS=10V. FEATURES RDS(ON)=33mW@VGS=4.5V. -30V,-5.9A,RDS(ON)=36mW@VGS=-10V. RDS(ON)=52mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisac

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3259

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■30V,7.6A,RDS(ON)=22mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■-30V,-5.9A,RDS(ON)=36mΩ@VGS=-10V. RDS(ON)=52mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-7.0A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-7.0A,RDS(ON)=32mW@VGS=-10V. RDS(ON)=50mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
firefly workshop
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
 詢價(jià)
Firefly
2022+
DNA
199
公司現(xiàn)貨,有掛就有貨。
 詢價(jià)
QUECTEL
23+
3G
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
QUECTEL
20+
MOudle
40
原裝
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AT/C-MAX
23+
CHIP
3000
原裝正品假一罰百!可開(kāi)增票!
 詢價(jià)
AT/C-MAX
22+
CHIP
3000
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng)，一手貨源，原裝正品可零售！
 詢價(jià)
CET
24+
SOP-8
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
HAMOS/漢姆
23+
SOP-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
CET
23+
SOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
CET/華瑞
21+
SOP8
13880
公司只售原裝,支持實(shí)單
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更多CEM供應(yīng)商 更新時(shí)間2025-4-23 11:17:00

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