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ER603

SUPERFASTRECTIFIER

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Superfastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadlength, 5lbs.(2.3kg

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

ER603DC

DPAKSURFACEMOUNTSUPERFASTRECTIFIER

FEATURES ●Forsurfacemountedapplications ●Lowprofilepackage ●Built-instrainrelief ●Easypickandplace ●Superfastrecoverytimesforhighefficiency ●PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ●Glasspassivatedjunction ●Hightemperaturesol

TRSYS

Transys Electronics

FDB603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD603AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP603AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FG603

6.0AmpMINIATUREPLASTICSILICONRECTIFIERSLOWCOSTLOWLEAKAGE

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FGM603

SelectionGuide

SANKENIGBT FGT313,FGT312,FGT412,FGT612,FGM622S,FGM603,FGM623S,MGD623N,MGD623S

SankenSanken electric

三墾三墾電氣株式會(huì)社

FR603

FASTRECOVERYRECTIFIER

ReverseVoltage-50to1000Volts ForwardCurrent-6.0Amperes Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Fastswitchingforhighefficiency ●Constructionutilizesvoid-freemoldedplastictechnique ●6.0ampereoperationatTA=75withn

Good-Ark

GOOD-ARK Electronics

詳細(xì)參數(shù)

  • 型號(hào)：

    CEU603

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET
23+
TO252
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
CET
24+
TO252
525
詢價(jià)
CET
23+
TO-263
5000
原裝正品,假一罰十
 詢價(jià)
CET
24+
TO-252-2
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
CET
24+
TO-252
2987
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來電!
 詢價(jià)
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
CET
2020+
TO-252
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CET
21+
TO-252
695
原裝現(xiàn)貨假一賠十
 詢價(jià)
CET/華瑞
06+
TO-252
2500
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
更多CEU603供應(yīng)商 更新時(shí)間2025-4-2 10:50:00

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