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CEZ03R10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,125A,RDS(ON)=3.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ04R10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,88A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ04R10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,88A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=6.6mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ05P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-93A,RDS(ON)=5.2mW@VGS=-10V. RDS(ON)=8mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ05P04

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V,-82A,RDS(ON)=6.5mW@VGS=-10V. RDS(ON)=10mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ06R10S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,67A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ06R10SL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,70A,RDS(ON)=7.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ07R10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,81A,RDS(ON)=7.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ07R12

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 120V,90A,RDS(ON)=7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ08R10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,70A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
CET/華瑞
23+
P-PAK5X6
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
CEZ
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
CET(華瑞)
2447
PR-PACK(5*6)
105000
2500個(gè)/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價(jià)
CET/華瑞
23+
PR-PACK(5*6)
22820
原裝正品，支持實(shí)單
 詢價(jià)
CET/華瑞
2023+
8700
原裝現(xiàn)貨
 詢價(jià)
CET-MOS
10
詢價(jià)
24+
N/A
75000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
CET-MOS
24+
con
10
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格
 詢價(jià)
CET-MOS
24+
con
10
優(yōu)勢庫存,原裝正品
 詢價(jià)
Toshiba
2025+
SOD-523-2
12420
詢價(jià)
更多CEZ供應(yīng)商 更新時(shí)間2025-4-3 10:34:00

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