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CEZ3P08A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-62A,RDS(ON)=8.4mW@VGS=-10V. RDS(ON)=13.5mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ3P09

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-53A,RDS(ON)=9mW@VGS=-10V. RDS(ON)=12mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ3R19

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. 30V,40A,RDS(ON)=11mW@VGS=10V. -30V,-33A,RDS(ON)=17mW@VGS=-10V. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ3R29

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). 30V,56A,RDS(ON)=6.2mW@VGS=10V. -30V,-51A,RDS(ON)=8.6mW@VGS=-10V. Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ5175

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V,-48A,RDS(ON)=23mW@VGS=-10V. RDS(ON)=28mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ5V6

Marking：LL；Package：ESC；Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

CEZ6185

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-53A,RDS(ON)=18mW@VGS=-10V. RDS(ON)=23mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ6405

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-21A,RDS(ON)=48mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=62mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ6R26LA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,102A,RDS(ON)=3.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=4.6mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ6R36L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,110A,RDS(ON)=4.0mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=5.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET/華瑞
23+
P-PAK5X6
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
CEZ
23+
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
CET(華瑞)
2447
PR-PACK(5*6)
105000
2500個(gè)/圓盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價(jià)
CET/華瑞
23+
PR-PACK(5*6)
22820
原裝正品，支持實(shí)單
 詢價(jià)
CET/華瑞
2023+
8700
原裝現(xiàn)貨
 詢價(jià)
CET-MOS
10
詢價(jià)
24+
N/A
75000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
CET-MOS
24+
con
10
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格
 詢價(jià)
CET-MOS
24+
con
10
優(yōu)勢庫存,原裝正品
 詢價(jià)
Toshiba
2025+
SOD-523-2
12420
詢價(jià)
更多CEZ供應(yīng)商 更新時(shí)間2025-4-6 10:34:00

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