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CEZC4112A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,40A,RDS(ON)=10.2mW@VGS=10V. RDS(ON)=16mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC5515A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V,14.6A,RDS(ON)=65mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6072AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,45A,RDS(ON)=8.5mW@VGS=10V. RDS(ON)=12mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6186

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,24A,RDS(ON)=24mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=30mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6186A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,26A,RDS(ON)=20.5mW@VGS=10V. RDS(ON)=28mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6405

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-17A,RDS(ON)=48mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=65mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6601A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-13.5A,RDS(ON)=86mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=125mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC8R04

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,47A,RDS(ON)=7.4mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=12mW@VGS=4.5V. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZS05C4

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,439A,RDS(ON)=0.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ16V,L3F

Package：SC-79，SOD-523；包裝：卷帶（TR）剪切帶（CT） 類別：電路保護(hù) TVS - 二極管 描述：TVS DIODE 16VWM 27VC ESC

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
CET/華瑞
23+
P-PAK5X6
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
CEZ
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
CET(華瑞)
2447
PR-PACK(5*6)
105000
2500個(gè)/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價(jià)
CET/華瑞
23+
PR-PACK(5*6)
22820
原裝正品，支持實(shí)單
 詢價(jià)
CET/華瑞
2023+
8700
原裝現(xiàn)貨
 詢價(jià)
CET-MOS
10
詢價(jià)
24+
N/A
75000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
CET-MOS
24+
con
10
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格
 詢價(jià)
CET-MOS
24+
con
10
優(yōu)勢庫存,原裝正品
 詢價(jià)
Toshiba
2025+
SOD-523-2
12420
詢價(jià)
更多CEZ供應(yīng)商 更新時(shí)間2025-4-9 10:34:00

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