CGHV35400F

400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Description Cree’sCGHV35400Fisagalliumnitride(GaN)highelectron mobilitytransistor(HEMT)designedspecificallywithhigh efficiency,highgainandwidebandwidthcapabilities,which makestheCGHV35400Fidealfor2.9-3.5GHzS-Bandradar amplifierapplications.Thetransistorismat

CGHV35400F1

400 W, 2.9 - 3.5 GHz, GaN HEMT

Description Wolfspeed’sCGHV35400F1isagalliumnitride(GaN)highelectronmobility transistor(HEMT)designedspecificallywithhighefficiencyandhighgainfor the2.9-3.5GHzS-Bandradarband.Thedevicehasbeendevelopedwithlong pulsecapabilitytomeetthedevelopingtrendsinra

CGHV38375F

400 W, 2.75 - 3.75 GHz, Internally-Matched, GaN-on-Silicon Carbide Transistor (IM-FET)

Description Wolfspeed’sCGHV38375Fisapackaged,400WHPAmatchedto50ohms atbothinputandoutputports.TheCGHV38375Foperatesfrom2.75-3.75 GHzprovidingcoverageovertheentireS-Bandradarband.Thishighpoweramplifierprovides>10dBoflargesignalgainand40power-added eff

CGHV40030

30 W, DC - 6 GHz, 50 V, GaN HEMT

Description Wolfspeed’sCGHV40030isanunmatched,galliumnitride(GaN)highelectron mobilitytransistor(HEMT)designedspecificallyforhighefficiency,highgain andwidebandwidthcapabilities.ThedevicecanbedeployedforL-,S-and C-Bandamplifierapplications.Thedatasheetspecifi

CGHV40050

50 W, DC - 4.0 GHz, 50 V, GaN HEMT

Description Wolfspeed’sCGHV40050isanunmatched,galliumnitride(GaN)highelectron mobilitytransistor(HEMT).TheCGHV40050,operatingfroma50voltrail, offersageneralpurpose,broadbandsolutiontoavarietyofRFandmicrowave applicationsupto4GHz.ThereferenceHPAdesignint

CGHV40100

100 W, DC - 3.0 GHz, 50 V, GaN HEMT

Description Wolfspeed'sCGHV40100isanunmatched,gallium nitride(GaN)highelectronmobilitytransistor(HEMT). TheCGHV40100,operatingfroma50voltrail,offers ageneralpurpose,broadbandsolutiontoavariety ofRFandmicrowaveapplications.GaNHEMTs offerhighefficiency,highg

CGHV40180F

180 W, DC - 2.0 GHz, 50 V, GaN HEMT

Description Wolfspeed’sCGHV40180Fisanunmatched,galliumnitride(GaN)high electronmobilitytransistor(HEMT).TheCGHV40180F,operatingfroma 50voltrail,offersageneralpurpose,broadbandsolutiontoavarietyof RFandmicrowaveapplications.GaNHEMTsofferhighefficiency,high

CGHV40180P

180 W, DC - 2.0 GHz, 50 V, GaN HEMT

Description Cree’sCGHV40180Pisanunmatched,galliumnitride(GaN)high electronmobilitytransistor(HEMT).TheCGHV40180P,operating froma50voltrail,offersageneralpurpose,broadbandsolution toavarietyofRFandmicrowaveapplications.GaNHEMTs offerhighefficiency,highgain

CGHV40200PP

200 W, 50 V, GaN HEMT

Description Wolfspeed'sCGHV40200PPisanunmatched,gallium nitride(GaN)highelectronmobilitytransistor(HEMT). TheCGHV40200PP,operatingfroma50voltrail, offersageneralpurpose,broadbandsolutiontoa varietyofRFandmicrowaveapplications.GaNHEMTs offerhighefficiency,hi

CGHV40320D

320 W, 4.0 GHz, GaN HEMT Die

Description Wolfspeed’sCGHV40320Disagalliumnitride(GaN)High ElectronMobilityTransistor(HEMT).GaNhassuperior propertiescomparedtosiliconorgalliumarsenide, includinghigherbreakdownvoltage,highersaturated electrondriftvelocity,andhigherthermalconductivity. GaNHEMT