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05N65

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEB05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU05N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CJPF05N65

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CJPF05N65

Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJPF05N65

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

SK05N65B

650VN-chPlanarMOSFET

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

SK05N65B-TF

650VN-chPlanarMOSFET

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PTP
21+
TO220F-4
19000
只做正品原裝現(xiàn)貨
 詢(xún)價(jià)
PTP
23+
TO220F-4
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
PTP
23+
TO220F-4
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
OptiFuse
23+
6000
誠(chéng)信服務(wù)，絕對(duì)原裝原盤(pán)
 詢(xún)價(jià)
24+
N/A
48000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
LSILOGIC
03+
BGA
4200
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢(xún)價(jià)
LSILOGIC
17+
BGA
9988
只做原裝進(jìn)口,自己庫(kù)存
 詢(xún)價(jià)
LSILOGIC
23+
BGA
20000
全新原裝假一賠十
 詢(xún)價(jià)
MURATA
23+
NA
35436
專(zhuān)做原裝正品,假一罰百!
 詢(xún)價(jià)
CITIZEN
24+
14000
詢(xún)價(jià)
更多CSA05N65供應(yīng)商 更新時(shí)間2025-1-6 9:02:00

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