CY7C1318BV18-250BZC集成電路（IC）的存儲器規(guī)格書PDF中文資料

Features

? 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)

? 300-MHz clock for high bandwidth

? 2-Word burst for reducing address bus frequency

? Double Data Rate (DDR) interfaces

(data transferred at 600 MHz) @ 300 MHz

? Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

? Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches

? Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

? Synchronous internally self-timed writes

? 1.8V core power supply with HSTL inputs and outputs

? Variable drive HSTL output buffers

? Expanded HSTL output voltage (1.4V–VDD)

? Available in 165-ball FBGA package (13 x 15 x 1.4 mm)

? Offered in both lead-free and non lead-free packages

? JTAG 1149.1-compatible test access port

? Delay Lock Loop (DLL) for accurate data placement