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DE275-501N16A中文資料IXYS數(shù)據(jù)手冊PDF規(guī)格書
DE275-501N16A規(guī)格書詳情
VDSS = 500 V
ID25 = 16 A
RDS(on) = .5 ?
PDHS = 375 W
N-Channel Enhancement Mode
Avalanche Rated
Low Q
g and Rg
High dv/dt
Nanosecond Switching
Features
? Isolated Substrate
? high isolation voltage (>2500V)
? excellent thermal transfer
? Increased temperature and power cycling capability
? IXYS advanced low Qg process
? Low gate charge and capacitances
? easier to drive
? faster switching
? Low RDS(on)
? Very low insertion inductance (<2nH)
? No beryllium oxide (BeO) or other hazardous materials
Advantages
? Optimized for RF and high speed switching at frequencies to 100MHz
? Easy to mountóno insulators needed
? High power density
產(chǎn)品屬性
- 型號：
DE275-501N16A
- 制造商：
IXYS Corporation
- 功能描述：
Trans MOSFET N-CH 500V 16A 6-Pin(4+2Tab)
- 功能描述：
MOSFET N RF DE275
- 功能描述：
MOSFET, N, RF, DE275
- 功能描述：
RF MOSFET, N CHANNEL, 500V, DE-275; Transistor
- Type：
RF MOSFET; Drain Source Voltage
- Vds：
500V; Continuous Drain Current
- Id：
16A; Power Dissipation
- Pd：
590W; Operating Temperature
- Min：
-55C; Operating Temperature
- Max：
175C; No. of
- Pins：
6;RoHS
- Compliant：
Yes
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