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DMP4N60-TU

600V N-Channel Power MOSFET

DYELECDIYI Electronic Technology Co., Ltd.

迪一電子山東迪一電子科技有限公司

DMT4N60-TU

600VN-ChannelPowerMOSFET

DYELECDIYI Electronic Technology Co., Ltd.

迪一電子山東迪一電子科技有限公司

DTL4N60

PowerMOSFETReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTP4N60

PowerMOSFETReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTP4N60

ReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTP4N60F

PowerMOSFETReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTU4N60

PowerMOSFETReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTU4N60

ReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTU4N60

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

ET4N60

600V,4A,N-ChannelPowerMOSFET

ESTEKEstek Electronics Co. Ltd

伊泰克電子北京伊泰克電子有限公司

FCD4N60

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCD4N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCD4N60TF

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCD4N60TM

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCD4N60TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP4N60

600VN-ChannelMOSFET

Description SuperFET?MOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowonresistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,pr

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP4N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP4N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD4N60NZ

FDD4N60NZN-ChannelUniFETTMIIMOSFET600V,3.4A,2.5?

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravalanc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD4N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
方舟微
23+
TO-220
25800
方舟微替代國產(chǎn)系列出售
詢價
DIODES
22+
NA
70
原裝正品支持實單
詢價
Diodes
22+
TO2363 SC59 SOT233
9000
原廠渠道,現(xiàn)貨配單
詢價
Diodes
21+
TO2363 SC59 SOT233
13880
公司只售原裝,支持實單
詢價
DIODES
1809+
SOT-23-3
16750
就找我吧!--邀您體驗愉快問購元件!
詢價
DIODES
22+
NA
12080
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
Diodes Incorporated
2022+
TO-236-3,SC-59,SOT-23-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
DIODES(美臺)
23+
SOT233
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
詢價
24+
N/A
72000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
DIODES
23+
SOT23
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
更多DMP4N60-TU供應(yīng)商 更新時間2024-12-27 18:16:00